SUM110N04-03P-E3 Vishay, SUM110N04-03P-E3 Datasheet - Page 3

• Manufacturer Part Number: SUM110N04-03P-E3
• Description: MOSFET N-CH 40V 110A D2PAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUM110N04-03P-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 6500pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SUM110N04-03P-E3; SUM110N04-03P-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72346
S-80274-Rev. C, 11-Feb-08
8000
6000
4000
2000
240
200
160
120
250
200
150
100
80
40
50
0
0
0
0
0
0
C
rss
15
V
2
8
V
V
GS
DS
DS
Output Characteristics
C
= 10 thru 7 V
Transconductance
oss
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
30
I
D
Capacitance
- Drain Current (A)
16
4
45
C
24
6
iss
60
T
C
= - 55 °C
32
8
75
125 °C
25 °C
6 V
5 V
90
10
40
0.005
0.004
0.003
0.002
0.001
0.000
250
200
150
100
50
20
16
12
0
8
4
0
0
0
0
V
I
D
DS
20
= 110 A
1
On-Resistance vs. Drain Current
20
= 30 V
V
Transfer Characteristics
40
GS
Q
2
g
- Gate-to-Source Voltage (V)
40
I
- Total Gate Charge (nC)
D
SUM110N04-03P
60
Gate Charge
- Drain Current (A)
V
3
GS
T
25 °C
60
80
C
= 10 V
Vishay Siliconix
= 125 °C
4
100
80
5
www.vishay.com
120
- 55 °C
100
140
6
160
120
7
3