SUM110N04-03P-E3 Vishay, SUM110N04-03P-E3 Datasheet - Page 5

• Manufacturer Part Number: SUM110N04-03P-E3
• Description: MOSFET N-CH 40V 110A D2PAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUM110N04-03P-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 6500pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SUM110N04-03P-E3; SUM110N04-03P-E3TR

THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 72346
S-80274-Rev. C, 11-Feb-08
0.01
300
250
200
150
100
0.1
50
2
1
0
10 -
0
4
0.2
Single Pulse
http://www.vishay.com/ppg?72346.
Duty Cycle = 0.5
Maximum Avalanche and Drain Current
0.02
25
Package Limited
0.05
0.1
T
50
vs. Case Temperature
C
- Case Temperature (°C)
75
100
10 -
Normalized Thermal Transient Impedance, Junction-to-Case
3
125
150
Square Wave Pulse Duration (s)
175
10 -
2
1000
100
0.1
10
1
0.1
Limited by r
* V
GS
V
minimum V
DS
DS(on) *
Single Pulse
Safe Operating Area
T
- Drain-to-Source Voltage (V)
C
10 -
1
= 25 °C
SUM110N04-03P
1
GS
at which r
Vishay Siliconix
DS(on)
10
is specified
www.vishay.com
10 µs
100 µs
1 ms
10 ms
DC, 100 ms
1
100
5