PSMN050-80PS,127 NXP Semiconductors, PSMN050-80PS,127 Datasheet - Page 8

• Manufacturer Part Number: PSMN050-80PS,127
• Description: MOSFET N-CH 80V 22A TO-220AB3
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN050-80PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 51 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 633pF @ 12V
• Power - Max: 56W
• Mounting Type: Through Hole
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 50 mOhms
• Drain-source Breakdown Voltage: 80 V
• Continuous Drain Current: 22 A
• Power Dissipation: 56 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4901-5; 934063909127

NXP Semiconductors
PSMN050-80PS_1
Product data sheet
Fig 7.
Fig 9.
(S)
g
fs
35
30
25
20
15
10
(A)
40
30
20
10
I
5
0
D
0
source-drain (diode forward) voltage; typical
values
drain current; typical values
Source (diode forward) current as a function of
Forward transconductance as a function of
0
0
10
T
2
j
= 175 °C
20
4
30
25 °C
6
40
V
003aad048
003aad053
GS
I
D
(V)
(A)
50
8
Rev. 01 — 10 June 2009
Fig 8.
Fig 10. Drain-source on-state resistance as a function
R
(mΩ)
(pF)
1000
100
N-channel 80 V 50 mΩ standard level MOSFET
C
800
600
400
200
DSon
80
60
40
20
0
function of gate-source voltage; typical values
of gate-source voltage; typical values
Input and reverse transfer capacitances as a
0
2
C
C
iss
rss
5
4
PSMN050-80PS
10
6
15
8
© NXP B.V. 2009. All rights reserved.
V
V
003aad052
003aad054
GS
GS
(V)
(V)
20
10
8 of 14