PSMN050-80BS NXP Semiconductors, PSMN050-80BS Datasheet

PSMN050-80BS

Manufacturer Part Number
PSMN050-80BS
Description
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN050-80BS.pdf (14 pages)
1. Product profile
Table 1.
Symbol
V
I
P
T
Static characteristics
R
Dynamic characteristics
Q
Q
Avalanche ruggedness
E
D
j
DS
tot
DS(AL)S
DSon
GD
G(tot)
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
gate-drain charge
total gate charge
non-repetitive
drain-source
avalanche energy
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
PSMN050-80BS
N-channel 80 V 46 mΩ standard level MOSFET in D2PAK
Rev. 1 — 2 March 2012
High efficiency due to low switching
and conduction losses
DC-to-DC converters
Load switching
Conditions
T
T
T
V
V
see
V
V
j
mb
mb
GS
GS
GS
sup
≥ 25 °C; T
Figure
= 25 °C; V
= 25 °C; see
= 10 V; I
= 10 V; I
= 10 V; T
≤ 80 V; R
14; see
j
D
D
≤ 175 °C
j(init)
GS
GS
= 10 A; T
= 25 A; V
= 50 Ω; unclamped
Figure 2
= 10 V; see
= 25 °C; I
Figure 15
j
DS
= 25 °C
= 40 V;
D
= 22 A;
Figure 1
Suitable for standard level gate drive
sources
Motor control
Server power supplies
Min
-
-
-
-55
-
-
-
-
Product data sheet
Typ
-
-
-
-
37
2.3
11
-
Max
80
22
56
175
46
-
-
18
V
°C
nC
Unit
A
W
mΩ
nC
mJ

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PSMN050-80BS Summary of contents

Page 1

... PSMN050-80BS N-channel mΩ standard level MOSFET in D2PAK Rev. 1 — 2 March 2012 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...

Page 2

... T pulsed ° ° j(init) ≤ Ω; unclamped V sup GS All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 March 2012 PSMN050-80BS Graphic symbol mbb076 Version SOT404 Min Max - kΩ -20 ...

Page 3

... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature DC 10 All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 March 2012 PSMN050-80BS 0 50 100 150 T 10 μs 100 μ 100 (V) DS © ...

Page 4

... Product data sheet N-channel mΩ standard level MOSFET in D2PAK Conditions see Figure 4 Minimum footprint; mounted on a printed circuit board - All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 March 2012 PSMN050-80BS Min Typ Max - 2.2 2 003aad055 t p δ = ...

Page 5

... MHz °C; see Figure 0.5 Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 March 2012 PSMN050-80BS Min Typ Max Unit 4 ...

Page 6

... 003aad046 5 ( (V) DS Fig 6. 003aad052 (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 March 2012 PSMN050-80BS Min Typ - 0. 100 V ( DSon (mΩ Drain-source on-state resistance as a function of drain current ...

Page 7

... V (V) GS Fig 10. Transfer characteristics: drain current as a 03aa35 V typ max (V) GS Fig 12. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 March 2012 PSMN050-80BS ( 175 ° ° function of gate-source voltage; typical values ...

Page 8

... T j Fig 14. Gate charge waveform definitions 003aad050 Q (nC Fig 16. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 March 2012 PSMN050-80BS GS(pl) V GS(th GS1 GS2 ...

Page 9

... Product data sheet N-channel mΩ standard level MOSFET in D2PAK (pF All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 March 2012 PSMN050-80BS 003aad051 C iss C oss C rss (V) DS © NXP B.V. 2012. All rights reserved. ...

Page 10

... max. 1.60 10.30 2.90 11 2.54 1.20 9.70 2.10 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 March 2012 PSMN050-80BS mounting base 15.80 2.60 14.80 2.20 EUROPEAN PROJECTION SOT404 ISSUE DATE 05-02-11 06-03-16 © NXP B.V. 2012. All rights reserved ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN050-80BS v.1 20120302 PSMN050-80BS Product data sheet N-channel mΩ standard level MOSFET in D2PAK Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 March 2012 ...

Page 12

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 March 2012 PSMN050-80BS © NXP B.V. 2012. All rights reserved ...

Page 13

... Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMediaand UCODE— are trademarks of NXP B.V. HD RadioandHD Radiologo — are trademarks of iBiquity Digital Corporation. to:salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 March 2012 PSMN050-80BS © NXP B.V. 2012. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 2 March 2012 Document identifier: PSMN050-80BS ...

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