PSMN050-80BS NXP Semiconductors, PSMN050-80BS Datasheet - Page 7

• Manufacturer Part Number: PSMN050-80BS
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN050-80BS
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
R
(mΩ)
(A)
I
100
10
10
10
10
10
10
D
DSon
80
60
40
20
−1
−2
−3
−4
−5
−6
of gate-source voltage; typical values
gate-source voltage
Drain-source on-state resistance as a function
0
0
5
2
min
10
typ
4
15
max
V
All information provided in this document is subject to legal disclaimers.
GS
V
003aad054
GS
(V)
03aa35
(V)
20
6
Rev. 1 — 2 March 2012
N-channel 80 V 46 mΩ standard level MOSFET in D2PAK
Fig 10. Transfer characteristics: drain current as a
Fig 12. Gate-source threshold voltage as a function of
V
GS(th)
(V)
(A)
40
30
20
10
I
D
0
5
4
3
2
1
0
−60
function of gate-source voltage; typical values
junction temperature
0
T
0
2
j
= 175 °C
PSMN050-80BS
60
4
max
min
typ
25 °C
120
6
© NXP B.V. 2012. All rights reserved.
V
003aad048
003aad280
T
GS
j
(°C)
(V)
180
8
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