STP12NK30Z STMicroelectronics, STP12NK30Z Datasheet - Page 3

• Manufacturer Part Number: STP12NK30Z
• Description: MOSFET N-CH 300V 9A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP12NK30Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 670pF @ 25V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 9A
• Drain Source Voltage Vds: 300V
• On Resistance Rds(on): 400mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.4 Ohms
• Forward Transconductance Gfs (max / Min): 5.4 S
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7502-5; STP12NK30Z

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
C
V
Symbol
Symbol
Symbol
Symbol
I
oss eq.
V
R
V
SDM
(BR)DSS
g
t
t
I
I
C
I
SD
GS(th)
DS(on)
C
C
d(on)
d(off)
Q
Q
fs
RRM
DSS
GSS
I
2. Pulse width limited by safe operating area.
3. C
R
Q
Q
SD
t
oss
t
t
iss
rss
rr
gs
gd
r
f
(1)
G
g
rr
(1)
V
(2)
DSS
oss eq.
(3)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Gate Input Resistance
Turn-on Delay Time
Rise time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
V
V
V
V
V
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
V
R
(Resistive Load see, Figure 3)
V
V
I
I
V
(see test circuit, Figure 5)
D
V
SD
SD
DS
DS
GS
DS
GS
DS
GS
DD
DD
GS
DD
G
DS
= 1 mA, V
= 4.7
= 9 A, V
= 9 A, di/dt = 100A/µs
= Max Rating
= Max Rating, T
= V
= 10 V
= ± 20V
= 10V, I
= 0V, V
= 150 V, I
= 240V, I
= 10V
= 40V, T
= 25V, f = 1 MHz, V
Test Conditions
Test Conditions
Test Conditions
Test Conditions
GS
, I
,
V
GS
DS
I
D
GS
D
GS
D
j
D
D
= 150°C
= 4.5 A
= 50µA
= 4.5 A
= 0V to 440 V
= 0
= 9 A,
= 0
= 10 V
= 4.5 A
C
= 125 °C
GS
= 0
Min.
Min.
Min.
Min.
300
3
oss
when V
Typ.
3.75
0.36
Typ.
Typ.
13.4
Typ.
11.2
670
125
165
5.4
3.6
5.5
0.9
28
70
16
20
36
10
25
DS
increases from 0 to 80%
STP12NK30Z
Max.
Max.
Max.
Max.
±10
1.6
4.5
0.4
50
35
36
1
9
Unit
Unit
Unit
Unit
nC
nC
nC
µC
µA
µA
µA
pF
pF
pF
pF
ns
ns
ns
ns
ns
S
V
V
A
A
V
A
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