STP12NK30Z STMicroelectronics, STP12NK30Z Datasheet - Page 7

• Manufacturer Part Number: STP12NK30Z
• Description: MOSFET N-CH 300V 9A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP12NK30Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 670pF @ 25V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 9A
• Drain Source Voltage Vds: 300V
• On Resistance Rds(on): 400mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.4 Ohms
• Forward Transconductance Gfs (max / Min): 5.4 S
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7502-5; STP12NK30Z

DIM.
DIA.
G1
D1
H2
F1
F2
L2
L4
L5
L6
L7
L9
G
A
C
D
E
F
15.25
MIN.
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
10.0
13.0
2.65
3.75
2.4
6.2
3.5
L5
TO-220 MECHANICAL DATA
L7
TYP.
Dia.
1.27
16.4
mm
L6
L2
MAX.
10.40
15.75
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
14.0
2.95
3.93
3.85
2.7
6.6
L9
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.511
0.104
0.600
0.244
0.137
0.147
MIN.
L4
0.050
0.645
TYP.
inch
STP12NK30Z
P011C
MAX.
0.181
0.051
0.107
0.027
0.034
0.067
0.067
0.203
0.106
0.409
0.551
0.116
0.620
0.260
0.154
0.151
7/8