STP22NS25Z STMicroelectronics, STP22NS25Z Datasheet - Page 3

• Manufacturer Part Number: STP22NS25Z
• Description: MOSFET N-CH 250V 22A TO-220
• Manufacturer: STMicroelectronics
• Series: MESH OVERLAY™r

Specifications of STP22NS25Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 150 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 151nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 135W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 22 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 22 A
• Power Dissipation: 135000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 130mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6740-5; STP22NS25Z

STB22NS25Z - STP22NS25Z
1
Electrical ratings
Table 1.
1. Pulse width limited by safe operating area
2. I
Table 2.
Table 3.
V
Rthj-case Thermal resistance junction-case Max
Rthj-amb Thermal resistance junction-ambient Max
Symbol
Symbol
dv/dt
ESD(G-S)
I
V
P
DM
V
V
E
T
SD
I
DGR
I
I
TOT
T
T
AR
DS
GS
stg
AS
D
D
j
l
(1)
< 22A, di/dt < 200A/µs, V
(2)
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting T
Drain-source voltage (V
Drain-gate voltage (R
Gate- source voltage
Drain current (continuos) at T
Drain current (continuos) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
Peak diode recovery voltage slope
Storage temperature
Max. operating junction temperature
Maximum lead temperature for soldering purpose
Absolute maximum ratings
Thermal data
Avalanche Characteristics
j
= 25°C, I
DD
Parameter
Parameter
= 80% V
D
C
GS
= I
= 25°C
GS
j
AR
= 20 kΩ)
max)
= 0)
, V
(BR)DSS
C
C
DD
= 25°C
= 100°C
= 50V, R
g
= 47Ω)
–55 to 150
Max value
Value
2500
0.93
62.5
± 20
13.9
1.07
300
250
250
135
22
88
5
350
22
Electrical ratings
°C/W
°C/W
W/°C
V/ns
Unit
°C
Unit
°C
W
mJ
V
V
V
A
A
A
V
3/14
A