STP22NS25Z STMicroelectronics, STP22NS25Z Datasheet - Page 4

• Manufacturer Part Number: STP22NS25Z
• Description: MOSFET N-CH 250V 22A TO-220
• Manufacturer: STMicroelectronics
• Series: MESH OVERLAY™r

Specifications of STP22NS25Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 150 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 151nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 135W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 22 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 22 A
• Power Dissipation: 135000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 130mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6740-5; STP22NS25Z

Electrical characteristics
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Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 4.
Table 5.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
V
Symbol
Symbol
R
V
(BR)DSS
g
C
I
I
C
DS(on)
C
Q
GS(th)
Q
GSS
DSS
fs
Q
oss
iss
rss
gs
gd
g
(1)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On /off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
V
I
V
V
V
(see Figure 13)
I
V
V
V
V
V
D
D
DS
DS
DD
GS
GS
GS
DS
DS
DS
= 11A
= 250µA, V
> I
= 25V, f = 1MHz, V
= 10V
= 200V, I
= Max rating
= Max rating, T
= V
= ±18V
= 10V, I
Test conditions
D(on)
Test conditions
GS
, I
x R
D
D
D
GS
= 11A
= 250µA
= 20A,
DS(on)max,
= 0
C
= 125°C
GS
= 0
STB22NS25Z - STP22NS25Z
Min.
Min.
250
2
2400
Typ.
340
120
108
Typ.
0.13
22
11
40
3
Max. Unit
Max. Unit
0.15
151
100
±10
10
4
nC
nC
nC
pF
pF
pF
µA
µA
µA
S
V
V
Ω