STP22NS25Z STMicroelectronics, STP22NS25Z Datasheet - Page 4
![MOSFET N-CH 250V 22A TO-220](/photos/1/39/13943/to-220_sml.jpg)
STP22NS25Z
Manufacturer Part Number
STP22NS25Z
Description
MOSFET N-CH 250V 22A TO-220
Manufacturer
STMicroelectronics
Series
MESH OVERLAY™r
Datasheet
1.STP22NS25Z.pdf
(14 pages)
Specifications of STP22NS25Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
150 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
151nC @ 10V
Input Capacitance (ciss) @ Vds
2400pF @ 25V
Power - Max
135W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.15 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
22 S
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
22 A
Power Dissipation
135000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
11A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
130mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6740-5
STP22NS25Z
STP22NS25Z
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP22NS25Z
Manufacturer:
ST
Quantity:
10 000
Company:
Part Number:
STP22NS25Z
Manufacturer:
FUJI
Quantity:
9 000
Part Number:
STP22NS25Z
Manufacturer:
ST
Quantity:
20 000
Electrical characteristics
2
4/14
Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 4.
Table 5.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
V
Symbol
Symbol
R
V
(BR)DSS
g
C
I
I
C
DS(on)
C
Q
GS(th)
Q
GSS
DSS
fs
Q
oss
iss
rss
gs
gd
g
(1)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On /off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
V
I
V
V
V
(see Figure 13)
I
V
V
V
V
V
D
D
DS
DS
DD
GS
GS
GS
DS
DS
DS
= 11A
= 250µA, V
> I
= 25V, f = 1MHz, V
= 10V
= 200V, I
= Max rating
= Max rating, T
= V
= ±18V
= 10V, I
Test conditions
D(on)
Test conditions
GS
, I
x R
D
D
D
GS
= 11A
= 250µA
= 20A,
DS(on)max,
= 0
C
= 125°C
GS
= 0
STB22NS25Z - STP22NS25Z
Min.
Min.
250
2
2400
Typ.
340
120
108
Typ.
0.13
22
11
40
3
Max. Unit
Max. Unit
0.15
151
100
±10
10
4
nC
nC
nC
pF
pF
pF
µA
µA
µA
S
V
V
Ω