IXTH152N085T IXYS, IXTH152N085T Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTH152N085T
Manufacturer Part Number
IXTH152N085T
Description
MOSFET N-CH 85V 152A TO-247
Specifications of IXTH152N085T
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
85V
Current - Continuous Drain (id) @ 25° C
152A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
114nC @ 10V
Input Capacitance (ciss) @ Vds
5500pF @ 25V
Power - Max
360W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.007 Ohms
Drain-source Breakdown Voltage
85 V
Continuous Drain Current
152 A
Power Dissipation
360 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
85
Id(cont), Tc=25°c, (a)
152
Rds(on), Max, Tj=25°c, (?)
0.0070
Ciss, Typ, (pf)
5500
Qg, Typ, (nc)
114
Trr, Typ, (ns)
90
Trr, Max, (ns)
-
Pd, (w)
360
Rthjc, Max, (k/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TrenchMV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
I
I
I
I
E
dv/dt
P
T
T
T
T
T
Weight
Symbol
(T
BV
V
I
I
R
© 2006 IXYS CORPORATION All rights reserved
M
D25
LRMS
DM
AR
GSS
DSS
L
SOLD
DGR
D
J
JM
stg
GS(th)
DSS
GSM
AS
DS(on)
d
J
DSS
= 25°C unless otherwise specified)
Test Conditions
T
T
Transient
T
Lead Current Limit, RMS
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque
TO-3P
TO-247
Test Conditions
V
V
V
V
V
S
V
C
C
C
C
C
GS
J
J
J
DS
GS
DS
GS
GS
= 25°C to 175°C
= 25°C to 175°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
≤ 175°C, R
= 25°C
= 0 V, I
= V
= ± 20 V, V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/μs, V
GS
TM
DSS
, I
D
D
= 250 μA
D
= 250 μA
= 25 A, Notes 1, 2
G
DS
= 5 Ω
= 0 V
Preliminary Technical Information
GS
= 1 MΩ
DD
T
≤ V
J
= 150°C
DSS
IXTH152N085T
IXTQ152N085T
JM
Min.
2.0
85
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
1.13 / 10 Nm/lb.in.
Typ.
5.5
± 20
152
410
750
360
300
260
175
5.5
85
85
75
25
± 200
3
6
250
Max.
4.0
7.0
5
V/ns
mΩ
mJ
nA
μA
μA
°C
°C
°C
°C
°C
W
V
V
V
A
A
A
V
A
g
g
V
Features
Advantages
Applications
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
TO-247 (IXTH)
TO-3P (IXTQ)
Easy to mount
Space savings
High power density
- Motor Drives
- 42V Power Bus
- ABS Systems
Primary Switch for 24V and 48V
DC/DC Converters and Off-line UPS
V
I
R
High Current Switching
G = Gate
S = Source
D25
Systems
Applications
Automotive
G
DSS
DS(on)
D
G
S
D
S
=
= 152
≤ ≤ ≤ ≤ ≤
D = Drain
TAB = Drain
7.0 mΩ Ω Ω Ω Ω
85
DS99699 (11/06)
(TAB)
(TAB)
A
V
Related parts for IXTH152N085T
IXTH152N085T Summary of contents
... GS(th ± GSS DSS DS DSS Notes 1, 2 DS(on © 2006 IXYS CORPORATION All rights reserved Preliminary Technical Information IXTH152N085T IXTQ152N085T Maximum Ratings MΩ ± 20 152 75 410 JM 25 750 ≤ DSS 360 -55 ... +175 175 -55 ... +175 300 260 1. Nm/lb.in. 5.5 6 Characteristic Values Min. ...
... IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. ...
... V = 10V 1.4 1.6 1.8 2 2.2 2.4 = 76A Value D 140 120 T = 175ºC J 100 T = 25ºC J 200 250 300 IXTH152N085T IXTQ152N085T Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 2 10V GS 2.4 2.2 2 ...
... V - Volts SD Fig. 11. Capacitance 10,000 MHz 1,000 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions -40ºC J 25ºC 150ºC 5 25ºC J 0.9 1 1.1 1.2 1.3 1.00 C iss C oss 0.10 C rss 0.01 ...
... T = 25ºC 110 J 70 100 125º 125º 25º IXTH152N085T IXTQ152N085T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current T = 25º Ω 10V 43V 125º Amperes D Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature - - - - d(off Ω 10V 43V 25A D 25 ...
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