IXTH152N085T IXYS, IXTH152N085T Datasheet - Page 4

• Manufacturer Part Number: IXTH152N085T
• Description: MOSFET N-CH 85V 152A TO-247
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTH152N085T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 152A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 114nC @ 10V
• Input Capacitance (ciss) @ Vds: 5500pF @ 25V
• Power - Max: 360W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 85 V
• Continuous Drain Current: 152 A
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 85
• Id(cont), Tc=25°c, (a): 152
• Rds(on), Max, Tj=25°c, (?): 0.0070
• Ciss, Typ, (pf): 5500
• Qg, Typ, (nc): 114
• Trr, Typ, (ns): 90
• Trr, Max, (ns): -
• Pd, (w): 360
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
280
240
200
160
120
270
240
210
180
150
120
100
80
40
90
60
30
0
0
0.4
3.5
0
f = 1 MHz
0.5
5
4
Fig. 9. Forward Voltage Drop of
0.6
10
Fig. 7. Input Admittance
4.5
Fig. 11. Capacitance
0.7
Intrinsic Diode
15
V
V
V
GS
SD
DS
T
0.8
5
J
- Volts
- Volts
= 150ºC
- Volts
20
C iss
C oss
C rss
0.9
5.5
25
T
J
= -40ºC
1
150ºC
25ºC
T
6
J
30
= 25ºC
1.1
6.5
35
1.2
1.3
40
7
1.00
0.10
0.01
140
120
100
10
80
60
40
20
0.0001
9
8
7
6
5
4
3
2
1
0
0
0
0
V
I
I
10
D
G
DS
= 25A
= 10mA
= 43V
Fig. 12. Maximum Transient Thermal
20
0.001
40
Fig. 8. Transconductance
30
Q
Pulse Width - Seconds
Fig. 10. Gate Charge
G
40
80
- NanoCoulombs
I
0.01
D
50
Impedance
- Amperes
T
J
= - 40ºC
150ºC
120
60
25ºC
IXTQ152N085T
70
0.1
160
80
90
1
100 110 120
200
10
240