IXTH230N085T IXYS, IXTH230N085T Datasheet - Page 2

• Manufacturer Part Number: IXTH230N085T
• Description: MOSFET N-CH 85V 230A TO-247
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTH230N085T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.4 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 230A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 187nC @ 10V
• Input Capacitance (ciss) @ Vds: 9900pF @ 25V
• Power - Max: 550W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0044 Ohms
• Drain-source Breakdown Voltage: 85 V
• Continuous Drain Current: 230 A
• Power Dissipation: 550 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 85
• Id(cont), Tc=25°c, (a): 230
• Rds(on), Max, Tj=25°c, (?): 0.0044
• Ciss, Typ, (pf): 9900
• Qg, Typ, (nc): 187
• Trr, Typ, (ns): 90
• Trr, Max, (ns): -
• Pd, (w): 550
• Rthjc, Max, (k/w): 0.27
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
T
I
I
V
t
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
SM
d(on)
d(off)
S
r
f
Notes: 1.
rr
fs
J
iss
oss
rss
thJC
thCH
SD
g(on)
gs
gd
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
2. On through-hole packages, R
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %;
location must be 5 mm or less from the package body.
Test Conditions
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
Pulse width limited by T
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= 50 A, V
= 50 A, -di/dt = 100 A/ms
= 25 V, V
= 3.3 Ω (External)
= 10 V; I
= 10 V, V
PRELIMINARY TECHNICAL INFORMATION
= 0 V
= 0 V, V
= 10 V, V
GS
D
DS
GS
DS
DS
= 60 A, Note 1
= 0 V, Note 1
= 25 V, f = 1 MHz
= 0 V
= 0.5 V
= 0.5 V
4,835,592
4,850,072
4,881,106
DSS
DSS
JM
, I
4,931,844
5,017,508
5,034,796
, I
D
D
= 50 A
DS(on)
= 50 A
Kelvin test contact
5,049,961
5,063,307
5,187,117
Characteristic Values
Min.
Min.
5,237,481
5,381,025
5,486,715
75
Characteristic Values
9900
1230
0.25
Typ.
Typ.
125
286
187
32
49
56
39
51
55
90
6,162,665
6,259,123 B1
6,306,728 B1
Max.
Max.
0.27°C/W
230
520
1.0
°C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
pF
pF
pF
n s
n s
n s
n s
n s
S
A
A
V
TO-247AD Outline
Pins: 1 - Gate
TO-3P (IXTQ) Outline
6,683,344
6,710,405B2
6,710,463
Terminals: 1 - Gate
3 - Source
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
ÆP
Q
R
S
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
6,727,585
6,759,692
6771478 B2
IXTQ230N085T
4.7
2.2
2.2
1.0
IXTH230N085T
Millimeter
1
3 - Source
.4
2 - Drain
4, TAB - Drain
2
21.46
16.26
20.32
Max.
3
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
.8
7,005,734 B2
7,063,975 B2
7,071,537
0.205 0.225
0.232 0.252
2 - Drain
Tab - Drain
.185
.087
.059
.040
.065
.113
.016
.140
.170
.819
.610
.780
Min.
242 BSC
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216