IXTH230N085T IXYS, IXTH230N085T Datasheet - Page 5

• Manufacturer Part Number: IXTH230N085T
• Description: MOSFET N-CH 85V 230A TO-247
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTH230N085T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.4 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 230A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 187nC @ 10V
• Input Capacitance (ciss) @ Vds: 9900pF @ 25V
• Power - Max: 550W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0044 Ohms
• Drain-source Breakdown Voltage: 85 V
• Continuous Drain Current: 230 A
• Power Dissipation: 550 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 85
• Id(cont), Tc=25°c, (a): 230
• Rds(on), Max, Tj=25°c, (?): 0.0044
• Ciss, Typ, (pf): 9900
• Qg, Typ, (nc): 187
• Trr, Typ, (ns): 90
• Trr, Max, (ns): -
• Pd, (w): 550
• Rthjc, Max, (k/w): 0.27
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS CORPORATION All rights reserved
41.5
40.5
39.5
38.5
220
200
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100
52
50
48
46
44
42
40
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36
34
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30
28
26
80
60
40
20
41
40
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38
0
25
24 26 28 30 32 34 36 38 40 42 44 46 48 50
2
Switching Times vs. Gate Resistance
t
T
V
I
D
Switching Times vs. Drain Current
35
r
J
DS
4
= 125ºC, V
= 25A
Rise Time vs. Junction Temperature
= 42.5V
Fig. 17. Resistive Turn-off
Fig. 15. Resistive Turn-on
45
6
Fig. 13. Resistive Turn-on
t
d(on)
I
GS
D
55
T
8
I
T
D
- - - -
J
= 50A
R
= 10V
J
- Degrees Centigrade
- Amperes
= 125ºC
G
T
I
J
D
10
- Ohms
65
= 25ºC
= 50A
t
R
V
f
G
DS
12
75
= 3.3 Ω , V
= 42.5V
I
D
= 25A
14
85
t
d(off)
GS
16
95
- - - -
= 10V
R
V
V
G
GS
DS
18
105
= 3.3 Ω
= 10V
= 42.5V
20
115
110
100
90
80
70
60
50
40
85
80
75
70
65
60
55
50
45
40
35
30
125
240
220
200
180
160
140
120
100
50
48
46
44
42
40
38
36
34
80
60
40
20
52
50
48
46
44
42
40
38
36
34
32
30
28
26
0
25
24
2
Switching Times vs. Junction Temperature
Switching Times vs. Gate Resistance
35
26
t
T
V
R
V
V
t
R
V
f
J
4
DS
f
G
GS
DS
G
DS
= 125ºC, V
= 3.3 Ω
= 3.3 Ω , V
= 42.5V
28
= 42.5V
= 42.5V
= 10V
45
Fig. 18. Resistive Turn-off
Fig. 16. Resistive Turn-off
6
T
30
Rise Time vs. Drain Current
J
t
t
d(off)
Fig. 14. Resistive Turn-on
d(off)
55
- Degrees Centigrade
GS
GS
8
32
- - - -
- - - -
R
= 10V
= 10V
65
G
I
D
34
10
- Ohms
- Amperes
I
I
D
D
75
= 25A
= 50A
36
I
D
12
= 25A
85
38
IXYS REF: T_230N085T (6V) 8-18-06.xls
IXTQ230N085T
14
IXTH230N085T
T
T
40
J
95
J
= 125ºC
= 25ºC
16
42
I
105
D
= 50A
44
18
115
46
20
125
350
325
300
275
250
225
200
175
150
125
100
75
50
48
90
85
80
75
70
65
60
55
50
50