IXTX60N50L2 IXYS, IXTX60N50L2 Datasheet - Page 4
![MOSFET N-CH 60A 500V PLUS247](/photos/5/55/55575/ixtx60n50l2_sml.jpg)
IXTX60N50L2
Manufacturer Part Number
IXTX60N50L2
Description
MOSFET N-CH 60A 500V PLUS247
Manufacturer
IXYS
Series
Linear L2™r
Datasheet
1.IXTX60N50L2.pdf
(5 pages)
Specifications of IXTX60N50L2
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
610nC @ 10V
Input Capacitance (ciss) @ Vds
24000pF @ 25V
Power - Max
960W
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
60
Rds(on), Max, Tj=25°c, (?)
0.10
Ciss, Typ, (pf)
24000
Qg, Typ, (nc)
610
Trr, Typ, (ns)
980
Pd, (w)
960
Rthjc, Max, (k/w)
0.13
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
200
180
160
140
120
100
100
100
80
60
40
20
90
80
70
60
50
40
30
20
10
0
0
0.4
3.5
0
f
4.0
= 1 MHz
0.5
5
4.5
Fig. 9. Forward Voltage Drop of
0.6
5.0
10
Fig. 7. Input Admittance
Fig. 11. Capacitance
T
5.5
J
= 125ºC
Intrinsic Diode
0.7
15
V
V
V
6.0
SD
DS
GS
- Volts
- Volts
- Volts
0.8
T
6.5
20
J
C iss
C oss
= 125ºC
C rss
- 40ºC
7.0
25ºC
0.9
25
7.5
T
J
= 25ºC
1.0
8.0
30
8.5
1.1
35
9.0
1.2
9.5
40
1.000
0.100
0.010
0.001
16
14
12
10
55
50
45
40
35
30
25
20
15
10
0.00001
8
6
4
2
0
5
0
0
0
V
I
I
10
D
G
100
DS
= 30A
= 10mA
Fig. 12. Maximum Transient Thermal
0.0001
= 250V
20
T
J
200
= - 40ºC
Fig. 8. Transconductance
125ºC
30
25ºC
Fig. 10. Gate Charge
0.001
Q
300
Pulse Width - Seconds
G
40
- NanoCoulombs
I
D
Impedance
- Amperes
400
50
0.01
500
60
70
IXTK60N50L2
IXTX60N50L2
600
0.1
80
700
90
1
800
100
110
900
10