IXTX60N50L2 IXYS, IXTX60N50L2 Datasheet - Page 5
![MOSFET N-CH 60A 500V PLUS247](/photos/5/55/55575/ixtx60n50l2_sml.jpg)
IXTX60N50L2
Manufacturer Part Number
IXTX60N50L2
Description
MOSFET N-CH 60A 500V PLUS247
Manufacturer
IXYS
Series
Linear L2™r
Datasheet
1.IXTX60N50L2.pdf
(5 pages)
Specifications of IXTX60N50L2
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
610nC @ 10V
Input Capacitance (ciss) @ Vds
24000pF @ 25V
Power - Max
960W
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
60
Rds(on), Max, Tj=25°c, (?)
0.10
Ciss, Typ, (pf)
24000
Qg, Typ, (nc)
610
Trr, Typ, (ns)
980
Pd, (w)
960
Rthjc, Max, (k/w)
0.13
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2008 IXYS CORPORATION, All rights reserved
1,000.0
100.0
10.0
1.0
0.1
10
R
DS(on)
T
T
Single Pulse
Fig. 13. Forward-Bias Safe Operating Area
J
C
= 150ºC
= 25ºC
Limit
V
@ T
DS
- Volts
C
100
= 25ºC
DC
25µs
100µs
1ms
10ms
100ms
1000
1,000.0
100.0
10.0
1.0
0.1
10
R
Fig. 14. Forward-Bias Safe Operating Area
T
T
Single Pulse
DS(on)
J
C
= 150ºC
= 75ºC
Limit
@ T
V
DS
- Volts
C
100
= 75ºC
IXTK60N50L2
IXTX60N50L2
DC
IXYS REF: T_60N50L2(9R)12-08-08-B
25µs
100µs
1ms
10ms
100ms
1000