BSH203,215 NXP Semiconductors, BSH203,215 Datasheet - Page 5

• Manufacturer Part Number: BSH203,215
• Description: MOSFET P-CH 30V 470MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BSH203,215

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 900 mOhm @ 280mA, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 470mA
• Vgs(th) (max) @ Id: 680mV @ 1mA
• Gate Charge (qg) @ Vgs: 2.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 110pF @ 24V
• Power - Max: 417mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934054719215; BSH203 T/R; BSH203 T/R

Philips Semiconductors
August 1998
P-channel enhancement mode
MOS transistor
Fig.13. Typical turn-on gate-charge characteristics.
-7
-6
-5
-4
-3
-2
-1
0
0
Gate-Source Voltage, VGS (V)
RD = 20 Ohms
VDD = 10 V
Tj = 25 C
0.5
1
Gate Charge, Qg (nC)
V
GS
1.5
= f(Q
G
2
)
2.5
BSH203
3
5
4.5
3.5
2.5
1.5
0.5
I
5
4
3
2
1
0
F
0
= f(V
Source-Drain Diode Current, IF (A)
Fig.14. Typical reverse diode current.
SDS
); conditions: V
0.5
Drain-Source Voltage, VSDS (V)
1
150 C
GS
= 0 V; parameter T
1.5
Product specification
Tj = 25 C
2
BSH203
BSH203
Rev 1.000
2.5
j