BSH203,215 NXP Semiconductors, BSH203,215 Datasheet - Page 5
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BSH203,215
Manufacturer Part Number
BSH203,215
Description
MOSFET P-CH 30V 470MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BSH203215.pdf
(7 pages)
Specifications of BSH203,215
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
900 mOhm @ 280mA, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
470mA
Vgs(th) (max) @ Id
680mV @ 1mA
Gate Charge (qg) @ Vgs
2.2nC @ 4.5V
Input Capacitance (ciss) @ Vds
110pF @ 24V
Power - Max
417mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934054719215
BSH203 T/R
BSH203 T/R
BSH203 T/R
BSH203 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSH203,215
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
August 1998
P-channel enhancement mode
MOS transistor
Fig.13. Typical turn-on gate-charge characteristics.
-7
-6
-5
-4
-3
-2
-1
0
0
Gate-Source Voltage, VGS (V)
RD = 20 Ohms
VDD = 10 V
Tj = 25 C
0.5
1
Gate Charge, Qg (nC)
V
GS
1.5
= f(Q
G
2
)
2.5
BSH203
3
5
4.5
3.5
2.5
1.5
0.5
I
5
4
3
2
1
0
F
0
= f(V
Source-Drain Diode Current, IF (A)
Fig.14. Typical reverse diode current.
SDS
); conditions: V
0.5
Drain-Source Voltage, VSDS (V)
1
150 C
GS
= 0 V; parameter T
1.5
Product specification
Tj = 25 C
2
BSH203
BSH203
Rev 1.000
2.5
j