BSH203,215 NXP Semiconductors, BSH203,215 Datasheet - Page 6

• Manufacturer Part Number: BSH203,215
• Description: MOSFET P-CH 30V 470MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BSH203,215

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 900 mOhm @ 280mA, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 470mA
• Vgs(th) (max) @ Id: 680mV @ 1mA
• Gate Charge (qg) @ Vgs: 2.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 110pF @ 24V
• Power - Max: 417mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934054719215; BSH203 T/R; BSH203 T/R

Philips Semiconductors
MECHANICAL DATA
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18.
3. Epoxy meets UL94 V0 at 1/8".
August 1998
P-channel enhancement mode
MOS transistor
discharge during transport or handling.
Plastic surface mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT23
1.1
0.9
A
max.
A
0.1
1
1
0.48
0.38
b
p
IEC
Fig.15. SOT23 surface mounting package.
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
JEDEC
1.4
1.2
E
REFERENCES
0
2
1.9
e
w
B
0.95
M
e
1
scale
B
EIAJ
6
1
2.5
2.1
H
E
0.45
0.15
L
p
A
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
EUROPEAN
w
L p
A
Q
c
X
v
ISSUE DATE
M
97-02-28
A
SOT23
Product specification
BSH203
Rev 1.000