BSH203,215 NXP Semiconductors, BSH203,215 Datasheet - Page 6
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BSH203,215
Manufacturer Part Number
BSH203,215
Description
MOSFET P-CH 30V 470MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BSH203215.pdf
(7 pages)
Specifications of BSH203,215
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
900 mOhm @ 280mA, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
470mA
Vgs(th) (max) @ Id
680mV @ 1mA
Gate Charge (qg) @ Vgs
2.2nC @ 4.5V
Input Capacitance (ciss) @ Vds
110pF @ 24V
Power - Max
417mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934054719215
BSH203 T/R
BSH203 T/R
BSH203 T/R
BSH203 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSH203,215
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
MECHANICAL DATA
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18.
3. Epoxy meets UL94 V0 at 1/8".
August 1998
P-channel enhancement mode
MOS transistor
discharge during transport or handling.
Plastic surface mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT23
1.1
0.9
A
max.
A
0.1
1
1
0.48
0.38
b
p
IEC
Fig.15. SOT23 surface mounting package.
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
JEDEC
1.4
1.2
E
REFERENCES
0
2
1.9
e
w
B
0.95
M
e
1
scale
B
EIAJ
6
1
2.5
2.1
H
E
0.45
0.15
L
p
A
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
EUROPEAN
w
L p
A
Q
c
X
v
ISSUE DATE
M
97-02-28
A
SOT23
Product specification
BSH203
Rev 1.000