STS2DPFS20V STMicroelectronics, STS2DPFS20V Datasheet - Page 2
![MOSFET P-CH 20V 2.5A 8-SOIC](/photos/1/38/13851/497-8-soic_sml.jpg)
STS2DPFS20V
Manufacturer Part Number
STS2DPFS20V
Description
MOSFET P-CH 20V 2.5A 8-SOIC
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STS2DPFS20V.pdf
(8 pages)
Specifications of STS2DPFS20V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
200 mOhm @ 1A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
600mV @ 250µA
Gate Charge (qg) @ Vgs
4.7nC @ 4.5V
Input Capacitance (ciss) @ Vds
315pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-3225-2
STS2DPFS20V-E
STS2DPFS20V-E
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STS2DPFS20V
Manufacturer:
STM
Quantity:
2 842
Part Number:
STS2DPFS20V
Manufacturer:
ST
Quantity:
20 000
STS2DPFS20V
TERMAL DATA
(*)
ELECTRICAL CHARACTERISTICS (T
OFF
ON
SCHOTTCKY STATIC ELECTRICAL CHARACTERISTICS
DYNAMIC
2/8
When Mounted on 1 inch
Rthj-amb
Rthj-amb
V
Symbol
Symbol
Symbol
Symbol
R
V
(BR)DSS
(1)
g
V
I
I
C
DS(on)
C
GS(th)
I
C
T
GSS
DSS
R (*)
fs (*)
T
F (*)
stg
oss
rss
iss
j
(*)
(*)
Storage Temperature Range
Maximum Lead Temperature For Soldering Purpose
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Reversed Leakage Current
Forward Voltage drop
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Thermal Resistance Junction-ambient MOSFET
Thermal Resistance Junction-ambient SCHOTTKY
2
Parameter
Parameter
Parameter
Parameter
FR-4 board, 2 oz of Cu and t
DS
= 0)
GS
= 0)
case
I
V
V
V
V
V
V
T
T
T
T
V
V
D
J
J
J
J
DS
DS
GS
DS
GS
GS
DS
DS
= 25 °C unless otherwise specified)
= 25
= 125
= 25
= 125
= 250 µA, V
[
= 15 V
10 sec
= Max Rating
= Max Rating T
= V
= 15V, f = 1 MHz, V
= ± 12 V
= 4.5 V
= 2.7 V
Test Conditions
Test Conditions
Test Conditions
Test Conditions
o
o
GS
C
C
o
o
C
C
GS
= 0
I
I
I
D
D
D
V
V
I
C
D
I
I
F
F
= 1 A
= 1 A
R
R
= 250 µA
=1 A
= 3 A
= 3 A
= 125°C
= 30 V
= 30 V
GS
MAX
= 0
Min.
Min.
Min.
Min.
0.6
20
-55 to 150
62.5
100
150
Typ.
Typ.
0.14
0.20
Typ.
0.40
Typ.
315
30
87
17
4
Max.
±100
Max.
Max.
Max.
0.20
0.25
0.51
0.46
100
0.2
10
1
o
o
C/W
C/W
o
o
Unit
Unit
Unit
Unit
mA
mA
mA
mA
µA
µA
nA
C
C
pF
pF
pF
V
V
S