STS2DPFS20V STMicroelectronics, STS2DPFS20V Datasheet - Page 3

• Manufacturer Part Number: STS2DPFS20V
• Description: MOSFET P-CH 20V 2.5A 8-SOIC
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STS2DPFS20V

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 200 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 4.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 315pF @ 15V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-3225-2; STS2DPFS20V-E

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
(
Safe Operating Area
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Pulse width limited by safe operating area.
Symbol
Symbol
Symbol
I
V
SDM ( )
t
t
I
Q
d(on)
Q
d(off)
SD (*)
RRM
I
Q
Q
SD
t
t
t
rr
gs
gd
r
f
rr
g
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-off Delay Time
Fall Time
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
V
(Resistive Load, Figure 3)
V
V
R
(Resistive Load, Figure 3)
I
I
V
(see test circuit, Figure 5)
SD
SD
R
DD
DD
DD
DD
G
G
= 4.7
= 2 A
= 2 A
= 10V I
= 10 V
= 10 V
= 10 V
= 4.7
Test Conditions
Test Conditions
Test Conditions
D
= 2A V
Thermal Impedance
di/dt = 100A/µs
V
T
GS
V
V
j
GS
GS
= 150°C
GS
I
I
D
D
= 0
=4.5V
= 4.5 V
= 1 A
= 4.5 V
= 1 A
Min.
Min.
Min.
Typ.
0.34
Typ.
Typ.
3.5
0.8
7.5
38
30
45
15
11
1
STS2DPFS20V
Max.
Max.
Max.
4.7
1.2
10
2
Unit
Unit
Unit
nC
nC
nC
nC
ns
ns
ns
ns
ns
A
A
V
A
3/8