STB55NF06T4 STMicroelectronics, STB55NF06T4 Datasheet

MOSFET N-CH 60V 50A D2PAK

STB55NF06T4

Manufacturer Part Number
STB55NF06T4
Description
MOSFET N-CH 60V 50A D2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STB55NF06T4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
18 mOhm @ 27.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.018 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
18 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
110000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
27.5A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
15mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6553-2
STB55NF06T4

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB55NF06T4
Manufacturer:
ST
Quantity:
12 000
Part Number:
STB55NF06T4
Manufacturer:
ST
0
Part Number:
STB55NF06T4
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Company:
Part Number:
STB55NF06T4
Quantity:
15 000
Order codes
General features
1. Refer to soa for the max allowable current value on
Description
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Applications
June 2006
STP55NF06FP
STB55NF06-1
FP-type due to Rth value
100% avalanche tested
Exceptional dv/dt capability
Switching application
STB55NF06
STP55NF06
N-channel 60V - 0.015Ω - 50A - D
Type
STP55NF06FP
STB55NF06T4
STB55NF06-1
Part number
STP55NF06
V
60V
60V
60V
60V
DSS
<0.018Ω
<0.018Ω
<0.018Ω
<0.018Ω
R
DS(on)
P55NF06FP
B55NF06
B55NF06
P55NF06
Marking
50A
50A
50A
50A
I
D
(1)
STP55NF06 - STP55NF06FP
STB55NF06 - STB55NF06-1
Rev 10
Internal schematic diagram
2
STripFET™ II Power MOSFET
PAK/I
TO-220FP
TO-220
TO-220FP
Package
TO-220
D
I
2
2
PAK
2
PAK
PAK/TO-220/TO-220FP
1
1
2
2
3
3
Tape & reel
Packaging
Tube
Tube
Tube
D
I
2
2
PAK
PAK
1
www.st.com
1 2
3
3
1/18
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STB55NF06T4 Summary of contents

Page 1

... Applications ■ Switching application Order codes Part number STB55NF06T4 STB55NF06-1 STP55NF06FP STP55NF06 June 2006 STB55NF06 - STB55NF06-1 STP55NF06 - STP55NF06FP 2 PAK/I STripFET™ II Power MOSFET ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS I Drain current (continuous Drain current (continuous ...

Page 4

Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 3. On/off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate threshold voltage GS(th) ...

Page 5

STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP Table 5. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO 220/D PAK/I PAK Figure 3. Safe operating area for TO-220FP Figure 5. Output characterisics 6/18 STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP Figure 2. Thermal ...

Page 7

STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP Figure 7. Transconductance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Electrical characteristics Figure 8. Static drain-source on resistance Figure 12. Normalized ...

Page 8

Electrical characteristics Figure 13. Source-drain diode forward characteristics 8/18 STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP ...

Page 9

STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP 3 Test circuit Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive waveform Figure 15. Gate charge ...

Page 10

Test circuit Figure 20. Diode recovery times waveform 10/18 STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP ...

Page 11

STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is ...

Page 12

Package mechanical data DIM 12/18 STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP 2 D PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. MIN. ...

Page 13

STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP DIM TO-262 (I PAK) MECHANICAL DATA mm. MIN. TYP MAX. 4.40 4.60 2.40 2.72 0.61 0.88 1.14 1.70 0.49 ...

Page 14

Package mechanical data DIM L20 L30 øP Q 14/18 STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP TO-220 MECHANICAL DATA mm. MIN. TYP MAX. 4.40 4.60 0.61 0.88 ...

Page 15

STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP DIM Ø TO-220FP MECHANICAL DATA mm. MIN. TYP MAX. 4.4 4.6 2.5 2.7 2.5 2.75 0.45 0.7 ...

Page 16

Packaging mechanical data 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 ...

Page 17

STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP 6 Revision history Table 6. Revision history Date 19-Oct-2005 02-Dec-2005 28-Mar-2006 26-Jun-2006 Revision 7 Preliminary document 8 New datasheet according to PCN MLD-PMT/05/1115 9 Inserted ecopack indication 10 New template, no content change ...

Page 18

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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