STB55NF06T4 STMicroelectronics, STB55NF06T4 Datasheet - Page 5

• Manufacturer Part Number: STB55NF06T4
• Description: MOSFET N-CH 60V 50A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB55NF06T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 27.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 18 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 110000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 27.5A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 15mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6553-2; STB55NF06T4

STB55NF06 - STB55NF06-1 - STP55NF06 - STP55NF06FP
Table 5.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Symbol
I
V
SDM
I
SD
RRM
I
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
di/dt = 100A/µs,
V
(see
SD
SD
DD
= 50A, V
= 50A,
= 30V, T
Figure
Test conditions
16)
GS
j
= 150°C
= 0
Min.
Electrical characteristics
Typ.
170
4.5
75
Max.
200
1.5
50
Unit
nC
ns
A
A
V
A
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