STB85NF55LT4 STMicroelectronics, STB85NF55LT4 Datasheet - Page 11

• Manufacturer Part Number: STB85NF55LT4
• Description: MOSFET N-CH 55V 80A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB85NF55LT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 5V
• Input Capacitance (ciss) @ Vds: 4050pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohms
• Forward Transconductance Gfs (max / Min): 130 S
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5732-2

STB85NF55L, STP85NF55L
Dim
A
D
E
V
b
c
e
J
L
L
A
D
E
H
R
b
c
e
L
2
1
2
1
1
2
1
1
1
2
4
0
0
1
0
1
8
7
8
4
2
2
1
1
0079457_M
Min
1
1
° 0
4 .
0 .
7 .
1 .
4 .
2 .
9 .
5 .
5 .
8 .
4 .
2 .
2 .
3 .
0
5
0
3
0
4
5
3
5
0
0
8
9
9
7
0
D2PAK (TO-263) mechanical data
Doc ID 8544 Rev 8
Typ
2
m
0
5 .
4 .
m
4
Max
1
1
4
0
0
1
0
1
9
5
2
2
1
1
0
5
° 8
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2 .
9 .
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3
3
0
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6
5
8
9
9
0
5
0
5
Min
0
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0
0
0
0
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0
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0
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0
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° 0
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9
9
9
9
5
5
3
1
7
5
7
8
2
5
4
4
2
0
9
0
1
Package mechanical data
Typ
0
n i
0
0 .
c
1 .
1
h
6
Max
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0 .
0 .
0 .
0 .
4 .
2 .
6 .
1 .
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0 .
1 .
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1 .
° 8
8
0
3
6
2
5
6
0
0
2
0
1
5
6
1
9
7
7
4
3
8
9
8
4
6
0
5
9
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