STB85NF55LT4 STMicroelectronics, STB85NF55LT4 Datasheet - Page 5

• Manufacturer Part Number: STB85NF55LT4
• Description: MOSFET N-CH 55V 80A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB85NF55LT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 5V
• Input Capacitance (ciss) @ Vds: 4050pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohms
• Forward Transconductance Gfs (max / Min): 130 S
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5732-2

STB85NF55L, STP85NF55L
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
I
V
SDM
I
RRM
I
SD
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 8544 Rev 8
I
I
di/dt = 100 A/µs,
V
Figure 16 on page 8
SD
SD
DD
= 80 A, V
= 80 A,
Test conditions
= 20 V, T
GS
J
= 150 °C
= 0
Electrical characteristics
Min
-
-
-
-
Typ.
240
80
6
Max
320
1.5
80
Unit
nC
ns
A
A
V
A
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