SUM110P04-05-E3 Vishay, SUM110P04-05-E3 Datasheet

MOSFET P-CH 40V 110A D2PAK

SUM110P04-05-E3

Manufacturer Part Number
SUM110P04-05-E3
Description
MOSFET P-CH 40V 110A D2PAK
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SUM110P04-05-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
110A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
280nC @ 10V
Input Capacitance (ciss) @ Vds
11300pF @ 25V
Power - Max
375W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.005 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
39 A
Power Dissipation
15000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-110A
Drain Source Voltage Vds
-40V
On Resistance Rds(on)
5mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SUM110P04-05-E3
SUM110P04-05-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUM110P04-05-E3
Manufacturer:
VISHAY
Quantity:
3 000
Company:
Part Number:
SUM110P04-05-E3
Quantity:
30
Company:
Part Number:
SUM110P04-05-E3
Quantity:
70 000
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 40 °C/W.
Document Number: 73493
S-80274-Rev. B, 11-Feb-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
DS
- 40
(V)
Ordering Information: SUM110P04-05-E3 (Lead (Pb)-free)
0.005 at V
G
Top View
TO-263
D
r
DS(on)
S
GS
(Ω)
J
= - 10 V
= 175 °C)
b, d
Drain Connected to Tab
P-Channel 40-V (D-S) MOSFET
I
D
- 110
(A)
a
d, e
A
= 25 °C, unless otherwise noted
Q
185 nC
Steady State
g
T
T
T
L = 0.1 mH
T
T
T
T
T
T
T
(Typ.)
C
C
C
C
C
A
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• TrenchFET
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
I
DM
thJA
thJC
I
AS
DS
GS
AS
D
S
D
stg
®
Power MOSFET
Typical
0.33
8
- 55 to 175
G
10.5
- 110
- 110
Limit
39
33
10
15
± 20
- 40
240
110
281
375
262
260
P-Channel MOSFET
75
b, c
b, c
b, c
b, c
b, c
a
a
SUM110P04-05
Maximum
S
D
0.4
10
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
1

Related parts for SUM110P04-05-E3

SUM110P04-05-E3 Summary of contents

Page 1

... DS DS(on) 0.005 TO-263 Drain Connected to Tab Top View Ordering Information: SUM110P04-05-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation ...

Page 2

... SUM110P04-05 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 73493 S-80274-Rev. B, 11-Feb- 1.5 2.0 16000 14000 12000 10000 80 100 120 160 200 240 SUM110P04-05 Vishay Siliconix ° ° 125 ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss 8000 6000 4000 C oss ...

Page 4

... SUM110P04-05 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1 0.9 0.7 0.5 0.3 0.1 - 0.1 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.9 1.2 1.5 100 125 150 ...

Page 5

... Document Number: 73493 S-80274-Rev. B, 11-Feb-08 100 125 150 175 0.001 0.01 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) SUM110P04-05 Vishay Siliconix 400 350 300 250 200 150 100 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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