SUM110P04-05-E3 Vishay, SUM110P04-05-E3 Datasheet - Page 4

• Manufacturer Part Number: SUM110P04-05-E3
• Description: MOSFET P-CH 40V 110A D2PAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUM110P04-05-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 280nC @ 10V
• Input Capacitance (ciss) @ Vds: 11300pF @ 25V
• Power - Max: 375W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.005 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 39 A
• Power Dissipation: 15000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -110A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 5mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUM110P04-05-E3; SUM110P04-05-E3TR

SUM110P04-05
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.3
- 0.5
100
1.1
0.9
0.7
0.5
0.3
0.1
10
- 50 - 25
1
0.0
Source-Drain Diode Forward Voltage
T
J
I
= 150 °C
D
0.3
V
SD
=10 mA
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
25
J
- Temperature (°C)
0.6
50
75
0.9
T
100
J
1000
= 25 °C
100
10
1
125
1.2
0.1
*V
Limited by r
Safe Operating Area, Junction-to-Case
150
GS
> minimum V
1.5
175
V
DS
- Drain-to-Source Voltage (V)
DS(on)
1
Single Pulse
T
C
*
GS
= 25 °C
at which r
DS(on)
10
0.05
0.04
0.03
0.02
0.01
0.00
0.0001
35
30
25
20
15
10
5
0
is specified
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
0.001
10
100
10 ms
1 ms
100 ms
DC
µs
100
2
µs
V
T
GS
0.01
A
3
= 25 °C
- Gate-to-Source Voltage (V)
4
0.1
Time (s)
T
C
S-80274-Rev. B, 11-Feb-08
5
= 25 °C
Document Number: 73493
1.00
T
A
6
= 150 °C
7
10
8
100
9
1000
10