SUM110P04-05-E3 Vishay, SUM110P04-05-E3 Datasheet - Page 5

• Manufacturer Part Number: SUM110P04-05-E3
• Description: MOSFET P-CH 40V 110A D2PAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUM110P04-05-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 280nC @ 10V
• Input Capacitance (ciss) @ Vds: 11300pF @ 25V
• Power - Max: 375W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.005 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 39 A
• Power Dissipation: 15000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -110A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 5mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUM110P04-05-E3; SUM110P04-05-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 73493
S-80274-Rev. B, 11-Feb-08
240
210
180
150
120
90
60
30
0
0.01
0
0.1
0.0001
http://www.vishay.com/ppg?73493.
1
25
Max. Avalanche and Drain Current
Package Limited
Single Pulse
0.1
0.2
0.5
0.02
D
vs. Case Temperature*
T
50
is based on T
C
0.05
- Case Temperature (°C)
75
100
J(max)
Normalized Thermal Transient Impedance, Junction-to-Case
0.001
125
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
150
175
Square Wave Pulse Duration (s)
0.01
400
350
300
250
200
150
100
50
0
25
Power Derating, Junction-to-Case
50
T
C
75
- Case Temperature (°C)
0.1
SUM110P04-05
100
Vishay Siliconix
125
www.vishay.com
150
1
175
5