SI7485DP-T1-E3 Vishay, SI7485DP-T1-E3 Datasheet

MOSFET P-CH 20V 12.5A PPAK 8SOIC

SI7485DP-T1-E3

Manufacturer Part Number
SI7485DP-T1-E3
Description
MOSFET P-CH 20V 12.5A PPAK 8SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI7485DP-T1-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.3 mOhm @ 20A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
12.5A
Vgs(th) (max) @ Id
900mV @ 1mA
Gate Charge (qg) @ Vgs
150nC @ 5V
Power - Max
1.8W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0073 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
80 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
12.5 A
Power Dissipation
1800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-20A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
13mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
-900mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7485DP-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7485DP-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
35 531
Part Number:
SI7485DP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI7485DP-T1-E3
Quantity:
82 125
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72275
S09-0227-Rev. C, 09-Feb-09
Ordering Information: Si7485DP-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
V
DS
- 20
(V)
8
6.15 mm
D
7
D
6
0.0073 at V
0.0090 at V
D
0.013 at V
PowerP AK SO-8
Si7485DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
Bottom V i e w
5
D
R
DS(on)
GS
GS
GS
1
J
a
S
= 150 °C)
= - 1.8 V
(Ω)
a
= - 4.5 V
= - 2.5 V
2
S
P-Channel 20-V (D-S) MOSFET
3
S
a
5.15 mm
4
G
a
b,c
A
I
D
- 20
- 18
- 15
= 25 °C, unless otherwise noted
(A)
Steady State
Steady State
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Battery Switch for Portable Devices
Symbol
Symbol
T
R
R
Available
New Low Thermal Resistance PowerPAK
Package with Low 1.07 mm Profile
J
V
V
I
P
, T
I
DM
thJA
thJC
I
DS
GS
D
S
D
stg
®
Power MOSFETs
Typical
- 16.5
10 s
- 4.5
- 20
3.2
1.7
20
54
G
5
P-Channel MOSFET
- 55 to 150
- 20
- 50
260
± 8
Steady State
S
D
Maximum
- 12.5
- 9.5
- 1.6
1.8
1.1
2.2
25
68
Vishay Siliconix
Si7485DP
www.vishay.com
®
°C/W
Unit
Unit
°C
W
V
A
1

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SI7485DP-T1-E3 Summary of contents

Page 1

... Bottom Ordering Information: Si7485DP-T1-E3 (Lead (Pb)-free) Si7485DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7485DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72275 S09-0227-Rev. C, 09-Feb-09 11000 100 120 0.030 0.024 0.018 °C J 0.012 0.006 0.000 0.8 1.0 1.2 Si7485DP Vishay Siliconix 8800 C iss 6600 4400 2200 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 4 1.4 1.2 1 ...

Page 4

... Si7485DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0.3 0.2 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 100 125 150 100 Limited by R DS(on 0 ° Single Pulse ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72275. Document Number: 72275 S09-0227-Rev. C, 09-Feb- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7485DP Vishay Siliconix -1 1 www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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