SI7485DP-T1-E3 Vishay, SI7485DP-T1-E3 Datasheet - Page 5

MOSFET P-CH 20V 12.5A PPAK 8SOIC

SI7485DP-T1-E3

Manufacturer Part Number
SI7485DP-T1-E3
Description
MOSFET P-CH 20V 12.5A PPAK 8SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI7485DP-T1-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.3 mOhm @ 20A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
12.5A
Vgs(th) (max) @ Id
900mV @ 1mA
Gate Charge (qg) @ Vgs
150nC @ 5V
Power - Max
1.8W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0073 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
80 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
12.5 A
Power Dissipation
1800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-20A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
13mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
-900mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7485DP-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7485DP-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
35 531
Part Number:
SI7485DP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI7485DP-T1-E3
Quantity:
82 125
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72275.
Document Number: 72275
S09-0227-Rev. C, 09-Feb-09
0.01
0.1
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0.02
10
0.05
-3
Normalized Thermal Transient Impedance, Junction-to-Case
10
Square Wave Pulse Duration (s)
-2
10
-1
1
Vishay Siliconix
Si7485DP
www.vishay.com
10
5

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