SI7485DP-T1-E3 Vishay, SI7485DP-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI7485DP-T1-E3
• Description: MOSFET P-CH 20V 12.5A PPAK 8SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7485DP-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.3 mOhm @ 20A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 12.5A
• Vgs(th) (max) @ Id: 900mV @ 1mA
• Gate Charge (qg) @ Vgs: 150nC @ 5V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0073 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 80 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 12.5 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -20A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 13mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -900mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7485DP-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72275
S09-0227-Rev. C, 09-Feb-09
0.020
0.016
0.012
0.008
0.004
0.000
0.1
50
10
1
6
5
4
3
2
1
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 20 A
0.2
On-Resistance vs. Drain Current
20
= 10 V
V
10
T
V
GS
J
SD
Q
= 150 °C
= 1.8 V
g
- Source-to-Drain Voltage (V)
I
0.4
D
40
- Total Gate Charge (nC)
Gate Charge
- Drain Current (A)
20
0.6
60
30
T
J
0.8
= 25 °C
80
V
V
GS
GS
40
100
= 2.5 V
= 4.5 V
1.0
120
1.2
50
11000
0.030
0.024
0.018
0.012
0.006
0.000
8800
6600
4400
2200
1.6
1.4
1.2
1.0
0.8
0.6
- 50
0
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
C
= 20 A
rss
= 4.5 V
1
4
T
0
J
V
V
GS
- Junction Temperature (°C)
DS
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
2
C
I
8
D
oss
= 20 A
50
Vishay Siliconix
C
75
12
3
iss
Si7485DP
100
www.vishay.com
16
4
125
150
20
5
3