SI7485DP-T1-E3 Vishay, SI7485DP-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI7485DP-T1-E3
• Description: MOSFET P-CH 20V 12.5A PPAK 8SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7485DP-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.3 mOhm @ 20A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 12.5A
• Vgs(th) (max) @ Id: 900mV @ 1mA
• Gate Charge (qg) @ Vgs: 150nC @ 5V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0073 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 80 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 12.5 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -20A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 13mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -900mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7485DP-T1-E3TR

Si7485DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
0.01
0.1
- 50
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
- 25
Single Pulse
0
Threshold Voltage
T
J
10
- Temperature (°C)
25
-3
50
I
D
Limited by R
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 1 mA
75
0.01
10
100
100
0.1
10
-2
1
0.1
DS(on)
Safe Operating Area, Junction-to-Case
125
Square Wave Pulse Duration (s)
150
V
DS
Single Pulse
10
T
- Drain-to-Source Voltage (V)
C
-1
1
= 25 °C
100
10
80
60
40
20
1
0
0.001
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
DC
0.01
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Time (s)
- T
t
A
1
S09-0227-Rev. C, 09-Feb-09
0.1
= P
t
2
DM
Document Number: 72275
Z
thJA
thJA
100
t
t
1
2
(t)
= 65 °C/W
1
600
10