IRF840ASPBF Vishay, IRF840ASPBF Datasheet

MOSFET N-CH 500V 8A D2PAK

IRF840ASPBF

Manufacturer Part Number
IRF840ASPBF
Description
MOSFET N-CH 500V 8A D2PAK
Manufacturer
Vishay
Type
Power MOSFETr
Datasheets

Specifications of IRF840ASPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 4.8A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
1018pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.85 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
8 A
Power Dissipation
3100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
8A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
850mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.85Ohm
Drain-source On-volt
500V
Gate-source Voltage (max)
±30V
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
D2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF840ASPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF840ASPBF
Quantity:
13 000
Company:
Part Number:
IRF840ASPBF
Quantity:
70 000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
e. Uses IRF840A, SiH840A data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91066
S11-1050-Rev. D, 30-May-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
I
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
2
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Temperature
PAK
DS
DS(on)
g
gs
gd
SD
(Max.) (nC)
(nC)
(V)
(nC)
 8.0 A, dI/dt  100 A/μs, V
(TO-262)
()
J
= 25 °C, L = 16 mH, R
G
D
S
G
a
D
D
2
PAK (TO-263)
S
c, e
a
a
b
DD
V
GS
g
 V
= 25 , I
D
SiHF840AS-GE3
IRF840ASPbF
SiHF840AS-E3
= 10 V
DS
2
PAK (TO-263)
, T
G
J
Single
IRF840AS, SiHF840AS, IRF840AL, SiHF840AL
 150 °C.
500
9.0
AS
38
18
N-Channel MOSFET
This document is subject to change without notice.
= 8.0 A (see fig. 12).
C
= 25 °C, unless otherwise noted)
Power MOSFET
V
0.85
D
S
GS
at 10 V
T
T
D
SiHF840ASTRL-GE3
SiHF840ASTL-E3
IRF840ASTRLPbF
for 10 s
C
A
2
= 25 °C
= 25 °C
PAK (TO-263)
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Low Gate Charge Q
• Improved Gate, Avalanche and Dynamic dV/dt
• Fully
• Effective C
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
• Half Bridge
• Full Bridge
Definition
Requirement
Ruggedness
Avalanche Voltage and Current
a
a
a
Characterized
SYMBOL
T
dV/dt
oss
J
V
V
E
E
I
I
P
, T
DM
I
AR
D
SiHF840ASTRR-GE3
IRF840ASTRRPbF
SiHF840ASTR-E3
DS
GS
AR
D
AS
D
2
stg
Specified
PAK (TO-263)
g
Results in Simple Drive
- 55 to + 150
Capacitance
a
a
LIMIT
300
± 30
500
510
125
8.0
5.1
1.0
8.0
3.1
5.0
32
13
a
www.vishay.com/doc?91000
d
Vishay Siliconix
I
SiHF840AL-GE3
IRF840ALPbF
SiHF840AL-E3
2
PAK (TO-262)
www.vishay.com
and
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
a
1

Related parts for IRF840ASPBF

IRF840ASPBF Summary of contents

Page 1

... PAK (TO-262 ORDERING INFORMATION 2 Package D PAK (TO-263) Lead (Pb)-free and Halogen-free SiHF840AS-GE3 IRF840ASPbF Lead (Pb)-free SiHF840AS-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current Linear Derating Factor b Single Pulse Avalanche Energy ...

Page 2

... IRF840AS, SiHF840AS, IRF840AL, SiHF840AL Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... J 0 4.0 91066_03 3.0 2.5 2.0 1.5 4.5 V 1.0 0.5 = 150 ° 91066_04 Fig Normalized On-Resistance vs. Temperature This document is subject to change without notice. Vishay Siliconix ° 150 C J ° µs Pulse Width 5.0 6.0 7.0 8.0 9.0 V Gate-to-Source Voltage ( Fig Typical Transfer Characteristics ...

Page 4

... IRF840AS, SiHF840AS, IRF840AL, SiHF840AL Vishay Siliconix MHz iss rss oss Drain-to-Source Voltage ( 91066_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 8 400 250 100 Total Gate Charge (nC) 91066_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 5

... Fig. 10a - Switching Time Test Circuit 125 150 10 % Fig. 10b - Switching Time Waveforms Single Pulse (Thermal Response Rectangular Pulse Duration (s) 1 Driver + - Fig. 12b - Unclamped Inductive Waveforms This document is subject to change without notice. Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 d(on) r ...

Page 6

... IRF840AS, SiHF840AS, IRF840AL, SiHF840AL Vishay Siliconix 1200 1000 800 600 400 200 100 50 Starting T , Junction Temperature (°C) 91066_12c J Fig. 12c - Maximum Avalanche Energy vs. Drain Current 610 600 590 580 570 560 550 540 0.0 1.0 2.0 3.0 4 Avalanche Current (A) 91066_12d AV Fig. 12d - Typical Drain-to-Source Voltage vs. ...

Page 7

... V for logic level devices GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91066. ...

Page 8

... E 0.020 0.039 E1 0.020 0.035 0.045 0.070 H 0.045 0.068 0.015 0.029 L1 0.015 0.023 L2 0.045 0.065 L3 0.330 0.380 L4 Package Information Vishay Siliconix H Gauge plane 0° to 8° B Seating plane Detail “A” Rotated 90° CW scale 8 View MILLIMETERS MIN. MAX. MIN. 6.86 - ...

Page 9

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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