IRF840ASPBF Vishay, IRF840ASPBF Datasheet
![MOSFET N-CH 500V 8A D2PAK](/photos/5/29/52982/vishay-d2pak_sml.jpg)
IRF840ASPBF
Specifications of IRF840ASPBF
Available stocks
Related parts for IRF840ASPBF
IRF840ASPBF Summary of contents
Page 1
... PAK (TO-262 ORDERING INFORMATION 2 Package D PAK (TO-263) Lead (Pb)-free and Halogen-free SiHF840AS-GE3 IRF840ASPbF Lead (Pb)-free SiHF840AS-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current Linear Derating Factor b Single Pulse Avalanche Energy ...
Page 2
... IRF840AS, SiHF840AS, IRF840AL, SiHF840AL Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
Page 3
... J 0 4.0 91066_03 3.0 2.5 2.0 1.5 4.5 V 1.0 0.5 = 150 ° 91066_04 Fig Normalized On-Resistance vs. Temperature This document is subject to change without notice. Vishay Siliconix ° 150 C J ° µs Pulse Width 5.0 6.0 7.0 8.0 9.0 V Gate-to-Source Voltage ( Fig Typical Transfer Characteristics ...
Page 4
... IRF840AS, SiHF840AS, IRF840AL, SiHF840AL Vishay Siliconix MHz iss rss oss Drain-to-Source Voltage ( 91066_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 8 400 250 100 Total Gate Charge (nC) 91066_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
Page 5
... Fig. 10a - Switching Time Test Circuit 125 150 10 % Fig. 10b - Switching Time Waveforms Single Pulse (Thermal Response Rectangular Pulse Duration (s) 1 Driver + - Fig. 12b - Unclamped Inductive Waveforms This document is subject to change without notice. Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 d(on) r ...
Page 6
... IRF840AS, SiHF840AS, IRF840AL, SiHF840AL Vishay Siliconix 1200 1000 800 600 400 200 100 50 Starting T , Junction Temperature (°C) 91066_12c J Fig. 12c - Maximum Avalanche Energy vs. Drain Current 610 600 590 580 570 560 550 540 0.0 1.0 2.0 3.0 4 Avalanche Current (A) 91066_12d AV Fig. 12d - Typical Drain-to-Source Voltage vs. ...
Page 7
... V for logic level devices GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91066. ...
Page 8
... E 0.020 0.039 E1 0.020 0.035 0.045 0.070 H 0.045 0.068 0.015 0.029 L1 0.015 0.023 L2 0.045 0.065 L3 0.330 0.380 L4 Package Information Vishay Siliconix H Gauge plane 0° to 8° B Seating plane Detail “A” Rotated 90° CW scale 8 View MILLIMETERS MIN. MAX. MIN. 6.86 - ...
Page 9
... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...