IRF840ASPBF Vishay, IRF840ASPBF Datasheet - Page 4
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IRF840ASPBF
Manufacturer Part Number
IRF840ASPBF
Description
MOSFET N-CH 500V 8A D2PAK
Manufacturer
Vishay
Type
Power MOSFETr
Specifications of IRF840ASPBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 4.8A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
1018pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.85 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
8 A
Power Dissipation
3100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
8A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
850mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.85Ohm
Drain-source On-volt
500V
Gate-source Voltage (max)
±30V
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
D2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF840ASPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
IRF840AS, SiHF840AS, IRF840AL, SiHF840AL
Vishay Siliconix
www.vishay.com
4
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91066_05
91066_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
10
10
10
10
10
20
16
12
1
8
4
0
5
4
3
2
0
1
I
D
= 8.0 A
V
DS ,
Q
10
G
Drain-to-Source Voltage (V)
V
, Total Gate Charge (nC)
DS
10
= 100 V
V
V
C
C
C
DS
GS
iss
rss
oss
20
= 250 V
= 0 V, f = 1 MHz
= C
= C
= C
V
DS
gs
gd
ds
= 400 V
+ C
C
C
C
+ C
10
rss
iss
oss
2
gd
gd
For test circuit
see figure 13
, C
This document is subject to change without notice.
30
ds
Shorted
10
40
3
91066_08
91066_07
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
0.1
0.1
10
10
Fig. 8 - Maximum Safe Operating Area
1
1
2
2
0.2
10
Operation in this area limited
T
V
J
V
DS
= 150
SD
by R
, Drain-to-Source Voltage (V)
0.5
, Source-to-Drain Voltage (V)
°
DS(on)
C
10
2
0.8
S11-1050-Rev. D, 30-May-11
www.vishay.com/doc?91000
T
Document Number: 91066
J
1
= 25
10
100
10
ms
µs
10
ms
µs
°
3
C
1.1
T
T
Single Pulse
C
J
V
= 150 °C
= 25 °C
GS
= 0 V
1.4
10
4