IRF840ASPBF Vishay, IRF840ASPBF Datasheet - Page 6
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IRF840ASPBF
Manufacturer Part Number
IRF840ASPBF
Description
MOSFET N-CH 500V 8A D2PAK
Manufacturer
Vishay
Type
Power MOSFETr
Specifications of IRF840ASPBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 4.8A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
1018pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.85 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
8 A
Power Dissipation
3100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
8A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
850mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.85Ohm
Drain-source On-volt
500V
Gate-source Voltage (max)
±30V
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
D2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF840ASPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
IRF840AS, SiHF840AS, IRF840AL, SiHF840AL
Vishay Siliconix
www.vishay.com
6
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
91066_12c
91066_12d
1200
1000
800
600
400
200
Fig. 12d - Typical Drain-to-Source Voltage vs.
610
600
590
580
570
560
550
540
0
25
0.0
Starting T
1.0
50
I
AV
Avalanche Current
, Avalanche Current (A)
J
2.0
, Junction Temperature (°C)
75
3.0
100
4.0
Top
Bottom
This document is subject to change without notice.
125
5.0
3.6 A
5.1 A
8.0 A
I
D
150
6.0
10 V
Fig. 13a - Basic Gate Charge Waveform
V
12 V
G
Fig. 13b - Gate Charge Test Circuit
V
GS
Same type as D.U.T.
Current regulator
Q
GS
0.2 µF
Current sampling resistors
3 mA
50 kΩ
Charge
Q
Q
0.3 µF
GD
G
I
G
S11-1050-Rev. D, 30-May-11
www.vishay.com/doc?91000
Document Number: 91066
D.U.T.
I
D
+
-
V
DS