IRF840ASPBF Vishay, IRF840ASPBF Datasheet - Page 6

• Manufacturer Part Number: IRF840ASPBF
• Description: MOSFET N-CH 500V 8A D2PAK
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF840ASPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1018pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.85 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 850mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.85Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF840ASPBF

IRF840AS, SiHF840AS, IRF840AL, SiHF840AL
Vishay Siliconix
www.vishay.com
6
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
91066_12c
91066_12d
1200
1000
800
600
400
200
Fig. 12d - Typical Drain-to-Source Voltage vs.
610
600
590
580
570
560
550
540
0
25
0.0
Starting T
1.0
50
I
AV
Avalanche Current
, Avalanche Current (A)
J
2.0
, Junction Temperature (°C)
75
3.0
100
4.0
Top
Bottom
This document is subject to change without notice.
125
5.0
3.6 A
5.1 A
8.0 A
I
D
150
6.0
10 V
Fig. 13a - Basic Gate Charge Waveform
V
12 V
G
Fig. 13b - Gate Charge Test Circuit
V
GS
Same type as D.U.T.
Current regulator
Q
GS
0.2 µF
Current sampling resistors
3 mA
50 kΩ
Charge
Q
Q
0.3 µF
GD
G
I
G
S11-1050-Rev. D, 30-May-11
www.vishay.com/doc?91000
Document Number: 91066
D.U.T.
I
D
+
-
V
DS