IRF840ASPBF Vishay, IRF840ASPBF Datasheet - Page 2

• Manufacturer Part Number: IRF840ASPBF
• Description: MOSFET N-CH 500V 8A D2PAK
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF840ASPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1018pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.85 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 850mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.85Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF840ASPBF

IRF840AS, SiHF840AS, IRF840AL, SiHF840AL
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. C
d. Uses IRF840A, SiHF840A data and test conditions
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2
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Maximum Junction-to-Ambient
(PCB Mount)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
oss
Temperature Coefficient
eff. is a fixed capacitance that gives the same charging time as C
a
J
= 25 °C, unless otherwise noted)
a
SYMBOL
This document is subject to change without notice.
SYMBOL
V
C
R
V
oss
C
C
C
t
t
I
I
R
R
V
DS(on)
C
C
Q
V
GS(th)
Q
GSS
d(on)
d(off)
I
Q
DSS
g
Q
t
DS
SM
t
I
t
t
on
thJC
DS
oss
oss
oss
SD
thJA
iss
rss
S
rr
fs
gs
gd
r
f
g
rr
eff.
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
V
J
R
GS
GS
V
GS
= 25 °C, I
g
DS
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
Reference to 25 °C, I
= 9.1 , R
J
= 10 V
= 10 V
= 0 V
MIN.
= 25 °C, I
= 400 V, V
-
-
V
V
V
f = 1.0 MHz, see fig. 5
V
TEST CONDITIONS
DD
V
DS
DS
oss
DS
GS
F
= 250 V, I
= 500 V, V
= V
V
= 50 V, I
while V
= 8.0 A, dI/dt = 100 A/μs
= 0, I
V
GS
V
D
DS
S
V
GS
GS
V
I
GS
D
= 31 , see fig. 10
DS
= 8.0 A, V
DS
V
= ± 30 V
see fig. 6 and 13
= 25 V,
, I
= 8.0 A, V
DS
D
= 0 V,
= 0 V, T
= 400 V, f = 1.0 MHz
D
= 1.0 V, f = 1.0 MHz
DS
= 250 μA
D
= 0 V to 480 V
D
= 250 μA
I
GS
D
= 4.8 A
is rising from 0 %to 80 % V
= 8.0 A,
= 4.8 A
D
TYP.
= 0 V
= 1 mA
GS
J
-
-
DS
= 125 °C
G
= 0 V
= 400 V,
b
d
b, d
b, d
b
c, d
S
D
b
MIN.
500
2.0
3.7
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.0
40
S11-1050-Rev. D, 30-May-11
www.vishay.com/doc?91000
DS
Document Number: 91066
.
TYP.
1018
1490
0.58
155
422
8.0
2.0
42
56
11
23
26
19
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
± 100
0.85
250
633
4.0
9.0
8.0
2.0
3.0
S
25
38
18
32
-
-
-
-
-
-
-
-
-
-
and L
UNIT
°C/W
D
UNIT
V/°C
)
nA
μA
nC
μC
pF
ns
ns

V
V
S
A
V