PMF290XN,115 NXP Semiconductors, PMF290XN,115 Datasheet - Page 10

• Manufacturer Part Number: PMF290XN,115
• Description: MOSFET N-CH 20V 1A SOT-323
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMF290XN,115

• Package / Case: SC-70-3, SOT-323-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 350 mOhm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.72nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 34pF @ 20V
• Power - Max: 560mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.35 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1 A
• Power Dissipation: 560 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057729115; PMF290XN T/R; PMF290XN T/R

Philips Semiconductors
8. Soldering
9. Revision history
Table 6:
9397 750 12767
Product data
Rev Date
Fig 15. Reflow soldering footprint for SOT323 (SC-70).
01
Dimensions in mm.
20040227
Revision history
CPCN
-
2.35
Description
Product data (9397 750 12767).
0.85
0.60
(3x)
0.55
(3x)
0.75
3
Rev. 01 — 27 February 2004
2.65
1.30
2.40
2
1
1.325
MSA429
N-channel TrenchMOS™ extremely low level FET
0.50
(3x) 1.90
solder lands
solder resist
occupied area
solder paste
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
PMF290XN
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