PMF290XN,115 NXP Semiconductors, PMF290XN,115 Datasheet - Page 2

• Manufacturer Part Number: PMF290XN,115
• Description: MOSFET N-CH 20V 1A SOT-323
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMF290XN,115

• Package / Case: SC-70-3, SOT-323-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 350 mOhm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.72nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 34pF @ 20V
• Power - Max: 560mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.35 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1 A
• Power Dissipation: 560 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057729115; PMF290XN T/R; PMF290XN T/R

Philips Semiconductors
3. Ordering information
Table 2:
4. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
9397 750 12767
Product data
Type number
PMF290XN
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
D
DM
S
SM
stg
j
DS
DGR
GS
tot
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
source (diode forward) current (DC) T
peak source (diode forward) current T
Ordering information
Limiting values
Package
Name
SC-70
Description
Plastic surface mounted package; 3 leads
Conditions
25 C
25 C
T
T
T
T
Rev. 01 — 27 February 2004
sp
sp
sp
sp
sp
sp
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
T
T
j
j
150 C
150 C; R
Figure 1
GS
GS
N-channel TrenchMOS™ extremely low level FET
= 4.5 V;
= 4.5 V;
p
p
GS
10 s;
10 s
= 20 k
Figure 2
Figure 2
Figure 3
and
3
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
PMF290XN
Min
-
-
-
-
-
-
-
-
-
55
55
Max
20
20
1
0.63
2
0.56
+150
+150
0.47
0.94
12
Version
SOT323
2 of 12
Unit
V
V
V
A
A
A
W
A
A
C
C