BUK98150-55A,135 NXP Semiconductors, BUK98150-55A,135 Datasheet - Page 11

• Manufacturer Part Number: BUK98150-55A,135
• Description: MOSFET N-CH 55V 5.5A SOT-223
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK98150-55A,135

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 137 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 5.3nC @ 5V
• Input Capacitance (ciss) @ Vds: 320pF @ 25V
• Power - Max: 8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.137 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 5 A
• Power Dissipation: 8000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056193135; BUK98150-55A /T3; BUK98150-55A /T3

NXP Semiconductors
9. Revision history
Table 6.
BUK98150-55A_4
Product data sheet
Document ID
BUK98150-55A_4
Modifications:
BUK98150-55A_3
Modifications:
BUK98150-55A_2
Modifications:
BUK98150-55A_1
Revision history
Release date
20070611
20061124
20020325
20001003
•
•
•
•
•
•
•
•
Table
typing error.
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Table 5: changed Typ and Max C
to 64 pF respectively because of typing error.
Table 3: Gate-source voltage maximum increased from 10 V to 15 V
Table 4: R
Table 5: Switching speed measurements updated
Section 1.4 and Table 3: Total power dissipation, peak drain current, peak reverse drain
current, and non-repetitive avalanche energy values updated.
5: IDSS drain leakage current condition changed from T
th(j-sp)
maximum decreased from 20 K/W to 15 K/W
Data sheet status
Product data sheet
Product data sheet
Product data sheet
Product data sheet
Rev. 04 — 11 June 2007
oss
output capacitance values from 40 pF to 53 pF and 48 pF
Change notice
-
-
-
-
N-channel TrenchMOS logic level FET
BUK98150-55A
j
= 175 C to T
Supersedes
BUK98150-55A_3
BUK98150-55A_2
BUK98150-55A_1
-
© NXP B.V. 2007. All rights reserved.
j
= 150 C due to
11 of 13