BUK98150-55A,135 NXP Semiconductors, BUK98150-55A,135 Datasheet - Page 9

• Manufacturer Part Number: BUK98150-55A,135
• Description: MOSFET N-CH 55V 5.5A SOT-223
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK98150-55A,135

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 137 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 5.3nC @ 5V
• Input Capacitance (ciss) @ Vds: 320pF @ 25V
• Power - Max: 8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.137 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 5 A
• Power Dissipation: 8000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056193135; BUK98150-55A /T3; BUK98150-55A /T3

NXP Semiconductors
7. Package outline
Fig 17. Package outline SOT223 (SC-73)
BUK98150-55A_4
Product data sheet
Plastic surface-mounted package with increased heatsink; 4 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT223
1.8
1.5
A
0.10
0.01
A
1
1
y
0.80
0.60
b
p
IEC
e
3.1
2.9
1
b
1
b
0.32
0.22
D
e
1
c
2
b
6.7
6.3
D
p
JEDEC
4
3.7
3.3
E
REFERENCES
3
Rev. 04 — 11 June 2007
0
4.6
e
w
B
M
2.3
e
SC-73
B
JEITA
scale
1
2
c
7.3
6.7
H
E
A
4 mm
1.1
0.7
L
1
p
0.95
0.85
Q
N-channel TrenchMOS logic level FET
0.2
v
H
E
E
detail X
0.1
w
BUK98150-55A
PROJECTION
EUROPEAN
0.1
y
A
L
p
Q
© NXP B.V. 2007. All rights reserved.
X
ISSUE DATE
04-11-10
06-03-16
v
A
M
A
SOT223
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