BSH108,215 NXP Semiconductors, BSH108,215 Datasheet - Page 11

• Manufacturer Part Number: BSH108,215
• Description: MOSFET N-CH 30V 1.9A SOT23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BSH108,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 830mW
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 1.9A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 1A, 10V
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.12 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.9 A
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055571215::BSH108 T/R::BSH108 T/R

Philips Semiconductors
[1]
9397 750 07652
Product specification
11. Data sheet status
12. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
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Definition
This data sheet contains the design target or goal specifications for product development. Specification may
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This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.
This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any
time without notice in order to improve design and supply the best possible product.
[1]
Rev. 02 — 25 October 2000
N-channel enhancement mode field-effect transistor
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and/or
performance.
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Semiconductors
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