BSH108,215 NXP Semiconductors, BSH108,215 Datasheet - Page 8

• Manufacturer Part Number: BSH108,215
• Description: MOSFET N-CH 30V 1.9A SOT23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BSH108,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 830mW
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 1.9A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 1A, 10V
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.12 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.9 A
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055571215::BSH108 T/R::BSH108 T/R

Philips Semiconductors
9397 750 07652
Product specification
Fig 13. Source (diode forward) current as a function of
T
j
= 25 C and 150 C; V
source-drain (diode forward) voltage; typical
values.
(A)
I S
4.5
3.5
2.5
1.5
0.5
5
4
3
2
1
0
0
V GS = 0V
0.2
0.4
GS
150 o C
0.6
= 0 V
0.8
T j = 25 o C
1
V SD (V)
1.2
03aa85
1.4
Rev. 02 — 25 October 2000
N-channel enhancement mode field-effect transistor
Fig 14. Gate-source voltage as a function of gate
I
D
= 0.5 A; V
charge; typical values.
V GS
(V)
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
DD
I D = 0.5 A
V DD = 15 V
= 15 V; T
T j = 25 o C
1
2
3
j
= 25 C
4
5
© Philips Electronics N.V. 2000. All rights reserved.
6
7
BSH108
Q G (nC)
8
03ab10
9
10
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