PMZ250UN,315 NXP Semiconductors, PMZ250UN,315 Datasheet - Page 2
![MOSFET N-CH 20V 2.28A SOT883](/photos/5/31/53137/sc-101_sot-883_sml.jpg)
PMZ250UN,315
Manufacturer Part Number
PMZ250UN,315
Description
MOSFET N-CH 20V 2.28A SOT883
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PMZ250UN315.pdf
(13 pages)
Specifications of PMZ250UN,315
Package / Case
SC-101, SOT-883
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
300 mOhm @ 200mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.28A
Vgs(th) (max) @ Id
950mV @ 250µA
Gate Charge (qg) @ Vgs
0.89nC @ 4.5V
Input Capacitance (ciss) @ Vds
45pF @ 20V
Power - Max
2.5W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.3 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.28 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934060157315
PMZ250UN T/R
PMZ250UN T/R
PMZ250UN T/R
PMZ250UN T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PMZ250UN,315
Manufacturer:
APTINA
Quantity:
2 000
NXP Semiconductors
3. Ordering information
Table 2.
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PMZ250UN_1
Product data sheet
Type number
PMZ250UN
CAUTION
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Electrostatic discharge
V
D
DM
S
SM
stg
j
DS
DGR
GS
tot
esd
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
electrostatic discharge voltage all pins
Ordering information
Limiting values
Package
Name
SC-101
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20 , IEC/ST 61340-5 , JESD625-A or
equivalent standards.
Description
leadless ultra small plastic package; 3 solder lands;
body 1.0
Conditions
25 C
25 C
T
T
T
T
-
-
T
T
human body model; C = 100pF; R = 1.5 k
machine model; C = 200 pF
sp
sp
sp
sp
sp
sp
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C; see
= 25 C
= 25 C; pulsed; t
0.6
Rev. 01 — 21 February 2008
T
T
0.5 mm
j
j
150 C
150 C; R
GS
GS
Figure 1
= 4.5 V; see
= 4.5 V; see
p
p
GS
10 s; see
10 s
= 20 k
N-channel TrenchMOS extremely low level FET
Figure 2
Figure 2
Figure 3
and
3
PMZ250UN
Min
-
-
-
-
-
-
-
-
-
-
-
-
55
55
© NXP B.V. 2008. All rights reserved.
Max
20
20
2.28
1.44
4.56
2.50
+150
+150
2.28
4.56
60
30
8
Version
SOT883
2 of 13
Unit
V
V
V
A
A
A
W
A
A
V
V
C
C