PMZ250UN,315 NXP Semiconductors, PMZ250UN,315 Datasheet - Page 6
![MOSFET N-CH 20V 2.28A SOT883](/photos/5/31/53137/sc-101_sot-883_sml.jpg)
PMZ250UN,315
Manufacturer Part Number
PMZ250UN,315
Description
MOSFET N-CH 20V 2.28A SOT883
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PMZ250UN315.pdf
(13 pages)
Specifications of PMZ250UN,315
Package / Case
SC-101, SOT-883
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
300 mOhm @ 200mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.28A
Vgs(th) (max) @ Id
950mV @ 250µA
Gate Charge (qg) @ Vgs
0.89nC @ 4.5V
Input Capacitance (ciss) @ Vds
45pF @ 20V
Power - Max
2.5W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.3 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.28 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934060157315
PMZ250UN T/R
PMZ250UN T/R
PMZ250UN T/R
PMZ250UN T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PMZ250UN,315
Manufacturer:
APTINA
Quantity:
2 000
NXP Semiconductors
PMZ250UN_1
Product data sheet
Fig 5. Output characteristics: drain current as a
Fig 7. Transfer characteristics: drain current as a
(A)
(A)
I
I
D
D
2.5
1.5
0.5
2.5
1.5
0.5
2
1
0
2
1
0
T
function of drain-source voltage; typical values
T
function of gate-source voltage; typical values
0
0
j
j
= 25 C
= 25 C and 150 C; V
0.5
1
4.5
25 C
3
1
2
DS
2.5
> I
D
T
j
= 150 C
V
R
1.5
3
GS
DSon
V
V
(V) = 1.5
DS
GS
03an02
03an04
(V)
(V)
1.8
2
Rev. 01 — 21 February 2008
2
4
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
R
DSon
( )
a
N-channel TrenchMOS extremely low level FET
0.8
0.6
0.4
0.2
2.0
1.5
1.0
0.5
1
0
0
T
of drain current; typical values
factor as a function of junction temperature
a
0
60
j
= 25 C
=
----------------------------- -
R
DSon 25 C
R
0.5
DSon
V
0
GS
(V) = 1.8
1
60
1.5
2
PMZ250UN
120
© NXP B.V. 2008. All rights reserved.
2
003aac024
T
j
I
D
( C)
03an03
(A)
2.5
4.5
3
180
2.5
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