BUK9575-55A,127 NXP Semiconductors, BUK9575-55A,127 Datasheet - Page 4

• Manufacturer Part Number: BUK9575-55A,127
• Description: MOSFET N-CH 55V 20A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9575-55A,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 68 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 643pF @ 25V
• Power - Max: 62W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.068 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 20 A
• Power Dissipation: 62000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056258127; BUK9575-55A; BUK9575-55A

7. Thermal characteristics
Table 4:
Philips Semiconductors
9397 750 07831
Product specification
Symbol
R
R
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
th(j-a)
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
thermal resistance from junction to mounting
base
7.1 Transient thermal impedance
Z th(j-mb)
(K/W)
10 -1
10 -2
10
1
10 -6
= 0.5
10 -5
Rev. 01 — 9 February 2001
10 -4
BUK9575-55A; BUK9675-55A
Conditions
vertical in still air; SOT78 package
mounted on printed circuit board;
minimum footprint; SOT404
package
Figure 4
10 -3
10 -2
P
10 -1
t p
TrenchMOS™ logic level FET
T
t p (s)
03nd47
=
t p
T
© Philips Electronics N.V. 2001. All rights reserved.
t
1
Value
60
50
2.4
Unit
K/W
K/W
K/W
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