SI4410DY,518 NXP Semiconductors, SI4410DY,518 Datasheet

MOSFET N-CH 30V 10A SOT96-1

SI4410DY,518

Manufacturer Part Number
SI4410DY,518
Description
MOSFET N-CH 30V 10A SOT96-1
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of SI4410DY,518

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13.5 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
34nC @ 5V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.007 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
110 A
Power Dissipation
203 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934056382518
SI4410DY /T3
SI4410DY /T3
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
Table 1.
Symbol Parameter
V
I
P
Dynamic characteristics
Q
Static characteristics
R
D
DS
tot
GD
DSon
Low conduction losses due to low
on-state resistance
DC motor control
DC-to-DC convertors
Lithium-ion battery applications
SI4410DY
N-channel TrenchMOS logic level FET
Rev. 03 — 4 December 2009
drain-source voltage T
drain current
total power
dissipation
gate-drain charge
drain-source
on-state resistance
Quick reference
Conditions
T
see
T
see
V
V
see
V
T
see
V
T
see
j
amb
amb
j
j
GS
DS
GS
GS
≥ 25 °C; T
= 25 °C;
= 25 °C;
Figure 1
Figure 2
Figure 12
Figure 10
Figure 10
= 15 V; T
= 10 V; I
= 4.5 V; I
= 10 V; I
= 25 °C; pulsed;
= 25 °C; pulsed;
j
D
D
and
≤ 150 °C
j
D
and
and
= 25 °C;
= 10 A;
= 10 A;
= 5 A;
3
11
11
Suitable for high frequency
applications due to fast switching
characteristics
Notebook computers
Portable equipment
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
7
15
11
Max
30
10
2.5
-
20
13.5
Unit
V
A
W
nC
mΩ
mΩ

Related parts for SI4410DY,518

SI4410DY,518 Summary of contents

Page 1

SI4410DY N-channel TrenchMOS logic level FET Rev. 03 — 4 December 2009 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 S source 2 S source 3 S source 4 G gate 5 D drain 6 D drain 7 D drain 8 D drain 3. Ordering information Table 3. Ordering information Type number Package Name Description SI4410DY SO8 plastic small outline package; 8 leads; body width 3 ...

Page 3

... NXP Semiconductors 120 I der (%) 100 Fig 1. Normalized continuous drain current as a function of ambient temperature DSon ( δ − −2 10 −1 10 Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage SI4410DY_3 Product data sheet 03aa19 120 P der (%) 150 200 ...

Page 4

... NXP Semiconductors 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter R thermal resistance from th(j-sp) junction to solder point R thermal resistance from th(j-a) junction to ambient 2 10 δ = 0.5 Z th(j-amb) (K/W) 0.2 10 0.1 0.05 0.02 1 −1 10 single pulse −2 10 −4 − Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration ...

Page 5

... NXP Semiconductors 6. Characteristics Table 6. Characteristics Symbol Parameter Static characteristics V gate-source threshold GS(th) voltage I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance I on-state drain-source DSon current Dynamic characteristics Q total gate charge G(tot) Q gate-source charge GS Q gate-drain charge GD t turn-on delay time ...

Page 6

... NXP Semiconductors ( 0.5 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values - ( min typ - Fig 7. Sub-threshold drain current as a function of gate-source voltage SI4410DY_3 Product data sheet 03ad50 50 3 ( (V) Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values ...

Page 7

... NXP Semiconductors 2.5 V GS(th) (V) 2 max 1.5 typ min 1 0 Fig 9. Gate-source threshold voltage as a function of junction temperature 2 a 1.5 1 0.5 0 − Fig 11. Normalized drain-source on-state resistance factor as a function of junction temperature SI4410DY_3 Product data sheet 03aa33 0. DSon (Ω) 0.02 0.01 ...

Page 8

... NXP Semiconductors > DSon ( Fig 13. Forward transconductance as a function of drain current; typical values SI4410DY_3 Product data sheet 03ae24 ( ° 150 ° (A) D Fig 14. Source current as a function of source-drain voltage; typical values Rev. 03 — 4 December 2009 SI4410DY N-channel TrenchMOS logic level FET 150 ° ° ...

Page 9

... NXP Semiconductors 7. Package outline SO8: plastic small outline package; 8 leads; body width 3 pin 1 index 1 e DIMENSIONS (inch dimensions are derived from the original mm dimensions) A UNIT max. 0.25 1.45 mm 1.75 0.25 0.10 1.25 0.010 0.057 inches 0.069 0.01 0.004 0.049 Notes 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. ...

Page 10

... Revision history Document ID Release date SI4410DY_3 20091204 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. SI4410DY-02 20010705 SI4410DY-01 20010220 SI4410DY_3 ...

Page 11

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 12

... NXP Semiconductors 11. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 9 Legal information 9.1 Data sheet status ...

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