SI4410DY,518 NXP Semiconductors, SI4410DY,518 Datasheet - Page 7

• Manufacturer Part Number: SI4410DY,518
• Description: MOSFET N-CH 30V 10A SOT96-1
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of SI4410DY,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 5V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 110 A
• Power Dissipation: 203 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056382518; SI4410DY /T3; SI4410DY /T3

NXP Semiconductors
SI4410DY_3
Product data sheet
Fig 9.
Fig 11. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.5
1.5
0.5
1.5
0.5
2
1
0
2
1
0
−60
-60
junction temperature
factor as a function of junction temperature
Gate-source threshold voltage as a function of
0
0
60
60
max
typ
min
120
120
T
03aa33
T
j
j
( ° C)
03ad57
(°C)
Rev. 03 — 4 December 2009
180
180
Fig 10. Drain-source on-state resistance as a function
Fig 12. Gate-source voltage as a function of gate
R
(Ω)
V
DSon
(V)
0.03
0.02
0.01
GS
10
0
8
6
4
2
0
of drain current; typical values
charge; typical values
0
0
I D = 10 A
V DD = 15 V
T j = 25 ºC
T
j
= 25 °C V
N-channel TrenchMOS logic level FET
10
10
GS
= 3.2 V
20
20
3.4 V
30
SI4410DY
3.6 V
30
© NXP B.V. 2009. All rights reserved.
40
Q
G
I
3.8 V
4.5 V
D
10 V
03ad55
(nC)
03ad51
5 V
(A)
40
50
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