PHD97NQ03LT,118 NXP Semiconductors, PHD97NQ03LT,118 Datasheet - Page 6

• Manufacturer Part Number: PHD97NQ03LT,118
• Description: MOSFET N-CH TRENCH 25V SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHD97NQ03LT,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 11.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1570pF @ 12V
• Power - Max: 107W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Power Dissipation: 107 W
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061139118

NXP Semiconductors
Table 6.
PHD97NQ03LT_1
Product data sheet
Symbol
t
t
t
t
Source-drain diode
V
t
Q
d(on)
r
d(off)
f
rr
Fig 5.
SD
r
V
GS(th)
(V)
1.5
0.5
3
2
1
0
-60
junction temperature
Gate-source threshold voltage as a function of
Characteristics
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
0
max
typ
min
…continued
60
Conditions
V
R
I
see
I
V
S
S
DS
G(ext)
DS
120
= 25 A; V
= 20 A; dI
Figure 12
= 12 V; R
= 30 V
003aab272
T
j
= 5.6 Ω
(°C)
180
GS
S
Rev. 01 — 24 March 2009
/dt = -100 A/µs; V
L
= 0 V; T
= 0.5 Ω; V
j
= 25 °C;
GS
Fig 6.
= 4.5 V;
(A)
I
10
10
10
10
GS
D
−3
−4
−5
−6
= 0 V;
gate-source voltage
Sub-threshold drain current as a function of
0
N-channel TrenchMOS logic level FET
0.5
1
PHD97NQ03LT
Min
-
-
-
-
-
-
-
min
1.5
Typ
18
33
20
12
0.87
38
14
typ
© NXP B.V. 2009. All rights reserved.
2
003aab271
max
V
Max
-
-
-
-
1.2
-
-
GS
(V)
2.5
Unit
ns
ns
ns
ns
V
ns
nC
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