PSMN038-100K,518 NXP Semiconductors, PSMN038-100K,518 Datasheet - Page 7

• Manufacturer Part Number: PSMN038-100K,518
• Description: MOSFET N-CH 100V 6.3A SOT96-1
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN038-100K,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 38 mOhm @ 5.2A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.3A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 1740pF @ 25V
• Power - Max: 3.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.038 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.3 A
• Power Dissipation: 3.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056595518; PSMN038-100K /T3; PSMN038-100K /T3

Philips Semiconductors
9397 750 07897
Product specification
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
I
T
D
j
= 25 C and 150 C; V
= 1 mA; V
V GS(th)
junction temperature.
drain current; typical values.
(V)
(S)
40
g
30
20
10
fs
0
4.5
3.5
2.5
1.5
0.5
0
5
4
3
2
1
0
V
-60
DS
DS
> I
= V
D
10
X R
-20
GS
DSon
T
j
20
DS
= 25 ºC
20
150 ºC
I
D
60
30
R
max.
typ.
min
DSon
100
40
03ae01
I
T j ( o C)
D
140
(A)
03aa32
50
Rev. 01 — 16 January 2001
180
N-channel enhancement mode field-effect transistor
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
T
V
j
GS
= 25 C; V
gate-source voltage.
as a function of drain-source voltage; typical
values.
= 0 V; f = 1 MHz
(A)
I D
C
10 4
C
(pF)
10 3
10 2
C
oss
iss
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
rss
10 -1
,
,
0
DS
= 5 V
1
PSMN038-100K
1
2
min
© Philips Electronics N.V. 2001. All rights reserved.
3
10
typ
V
V GS (V)
DS
03ae03
4
C
C
C
(V)
max
iss
oss
rss
03aa35
10 2
5
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