PSMN038-100K,518 NXP Semiconductors, PSMN038-100K,518 Datasheet - Page 8

• Manufacturer Part Number: PSMN038-100K,518
• Description: MOSFET N-CH 100V 6.3A SOT96-1
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN038-100K,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 38 mOhm @ 5.2A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.3A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 1740pF @ 25V
• Power - Max: 3.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.038 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.3 A
• Power Dissipation: 3.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056595518; PSMN038-100K /T3; PSMN038-100K /T3

Philips Semiconductors
9397 750 07897
Product specification
Fig 13. Source (diode forward) current as a function of
T
j
= 25 C and 150 C; V
source-drain (diode forward) voltage; typical
values.
50
40
30
20
10
(A)
I
0
S
0
V
GS
= 0 V
0.4
150 ºC
GS
= 0 V
0.8
T
j
= 25 ºC
V
SD
03ae02
(V)
1.2
Rev. 01 — 16 January 2001
N-channel enhancement mode field-effect transistor
Fig 14. Gate-source voltage as a function of gate
I
D
= 6.3 A; V
charge; typical values.
10
V
(V)
8
6
4
2
0
GS
0
I
T
D
j
DD
= 6.3 A
= 25 ºC
= 20 V, 50 V and 80 V
15
PSMN038-100K
V
DD
= 20 V 50 V 80 V
© Philips Electronics N.V. 2001. All rights reserved.
30
Q
G
(nC)
03ae04
45
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