BUK7219-55A,118 NXP Semiconductors, BUK7219-55A,118 Datasheet - Page 3

• Manufacturer Part Number: BUK7219-55A,118
• Description: MOSFET N-CH 55V 55A DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7219-55A,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 19 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 2108pF @ 25V
• Power - Max: 114W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.019 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 55 A
• Power Dissipation: 114000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056242118; BUK7219-55A /T3; BUK7219-55A /T3

Philips Semiconductors
9397 750 07575
Product specification
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
T
P
amb
der
P der
function of mounting base temperature.
(%)
= 25 C; I
=
120
100
----------------------
P
80
60
40
20
0
tot 25 C
P
0
tot
DM
25
is single pulse.
100%
50
1000
100
I D
(A)
10
1
75
1
P
100
t p
125
T
RDSon = VDS/ ID
150
=
t p
T
T mb ( o C)
t
175
03aa16
200
Rev. 01 — 02 October 2000
D.C.
10
Fig 2. Normalized continuous drain current as a
V
I
der
GS
function of mounting base temperature.
I der
=
120
100
(%)
80
60
40
20
4.5 V
0
------------------ -
I
D 25 C
0
I
D
25
100%
50
TrenchMOS™ standard level FET
V DS (V)
75
100 ms
tp = 10 us
100 us
1 ms
10 ms
BUK7219-55A
03na39
100
100
© Philips Electronics N.V. 2000. All rights reserved.
125
150
T mb ( o C)
175
03aa24
200
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