BUK7219-55A,118 NXP Semiconductors, BUK7219-55A,118 Datasheet - Page 5

• Manufacturer Part Number: BUK7219-55A,118
• Description: MOSFET N-CH 55V 55A DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7219-55A,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 19 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 2108pF @ 25V
• Power - Max: 114W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.019 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 55 A
• Power Dissipation: 114000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056242118; BUK7219-55A /T3; BUK7219-55A /T3

8. Characteristics
Table 5:
T
Philips Semiconductors
9397 750 07575
Product specification
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
C
C
C
t
t
t
t
L
L
DSS
GSS
d(on)
r
d(off)
f
j
d
s
(BR)DSS
GS(th)
DSon
iss
oss
rss
= 25 C unless otherwise specified
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
Conditions
I
Figure 9
V
V
V
Figure 7
V
f = 1 MHz;
V
V
measured from drain lead
from package to centre of
die
measured from source lead
from package to source
bond pad
D
D
DS
GS
GS
GS
DD
GS
T
T
T
T
T
T
T
T
T
= 0.25 mA; V
= 1 mA; V
j
j
j
j
j
j
j
j
j
= 55 V; V
= 25 C
= 55 C
= 25 C
= 175 C
= 55 C
= 25 C
= 175 C
= 10 V; V
= 10 V; I
= 25 C
= 175 C
= 0 V; V
= 30 V; R
= 5 V; R
Rev. 01 — 02 October 2000
and
Figure 12
DS
DS
G
D
8
GS
L
= 10 ;
= 25 A;
DS
= V
GS
= 25 V;
= 1.2 ;
= 0 V
= 0 V
= 0 V
GS
;
Min
55
50
2
1
TrenchMOS™ standard level FET
BUK7219-55A
Typ
3
0.05
2
16
1581
372
221
16
70
57
41
2.5
7.5
© Philips Electronics N.V. 2000. All rights reserved.
Max
4
4.4
10
500
100
19
38
2108
446
303
Unit
V
V
V
V
V
nA
m
m
pF
pF
pF
ns
ns
ns
ns
nH
nH
5 of 13
A
A